Carl Zeiss Smt Gmbh

Carl-Zeiss-Smt Ag

Andras G Major

Markus Deguenther

Damian Fiolka

Johannes Wangler

Michael Patra

Manfred Maul

Yim-Bun Patrick Kwan

Stefan Xalter

Michael Layh

Jan Horn

Florian Bach

Johannes Eisenmenger

Ralf Mueller

Gundula Weiss

Toralf Gruner

Ingo Saenger

Jochen Hetzler

Thomas Korb

Olaf Dittmann

Severin Waldis

Ralf Scharnweber

Oliver Dier

Peter Vogt

Martin Hermann

Martin Vogt

Anne Christine Andresen

The invention concerns a method of and an arrangement for determining the heating condition of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. In an embodiment the mirror is an EUV mirror and a method according to the invention comprises the following steps: deflecting at least one input measuring beam on to the mirror; ascertaining at least one optical parameter of at least one output measuring beam produced from the input measuring beam after interaction with the mirror; and determining the heating condition of the mirror on the basis of the parameter.

Method and arrangement for determining the heating condition of a mirror in an optical system

An optical system for a microlithographic projection exposure apparatus and a microlithographic exposure method are disclosed. In an embodiment an optical system for a microlithographic projection exposure apparatus includes at least one mirror arrangement having a plurality of mirror elements which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement. The optical system also includes at least one manipulator downstream of the mirror arrangement in the light propagation direction. The manipulator has a raster arrangement of manipulator elements so that light incident on the manipulator during operation of the optical system is influenced differently in its polarization state and/or in its intensity in dependence on the incidence location.

Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method

Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Method and device for monitoring multiple mirror arrays in an illumination system of a microlithographic projection exposure apparatus

A device for guiding electromagnetic radiation into a projection exposure apparatus for semiconductor lithography includes an optical fiber and an actuator for the mechanical manipulation of a section of the fiber as a result of which a temporally averaged homogenization of an intensity profile of electromagnetic radiation emerging at an exit end of the fiber can be achieved. A projection exposure apparatus for semiconductor lithography is equipped with the abovementioned device.

Device for guiding electromagnetic radiation into a projection exposure apparatus

A microlithographic projection exposure apparatus includes a projection light source. The apparatus also includes a heating light source for generating heating light which is at least partly absorbed by an optical element. An illumination optical unit directs the heating light onto the optical element such that the heating light has a predefined intensity distribution on an optical surface of the optical element. The illumination optical unit includes a deflection element which is a diffractive optical element or a refractive freeform element. The deflection element simultaneously directs the heating light impinging thereon in different directions.

Microlithographic projection exposure apparatus

An illumination system of a microlithographic projection exposure apparatus includes a beam deflection array including a number beam deflection elements, for example mirrors. Each beam deflection element is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The light beams reflected from the beam deflection elements produce spots in a system pupil surface. The number of spots illuminated in the system pupil surface during an exposure process, during which a mask is imaged on a light sensitive surface, is greater than the number of beam deflection elements. This may be accomplished with the help of a beam multiplier unit that multiplies the light beams reflected from the beam deflection elements. In another embodiment the beam deflecting elements are controlled such that the irradiance distribution produced in the system pupil surface changes between two consecutive light pulses of an exposure process.

Illumination system of a microlithographic projection exposure apparatus

A microlithographic projection exposure apparatus includes an optical surface, which may be formed by a plurality of micro-mirrors, and a measurement device which is configured to measure a parameter related to the optical surface at a plurality of locations. The measurement device includes an illumination unit with a plurality of illumination members, each having a light exit facet. An optical imaging system establishes an imaging relationship between an object plane in which at least two light exit facets are arranged, and an image plane which at least substantially coincides with the optical surface. A detector unit measures the property of measuring light after it has interacted with the optical surface, and an evaluation unit determines the surface related parameter for each of the locations on the basis of the properties determined by the detector unit.

An illumination system of a microlithographic projection exposure apparatus comprises a pupil surface and an arrangement of individually drivable beam deviating elements. Each beam deviating element is configured to direct light impinging thereon onto different positions on the pupil surface in response to a control signal applied to the beam deviating element. According to the disclosure an attenuation unit is provided which is configured to reduce the intensity of light, which is directed by any arbitrary beam deviating element (onto the pupil surface, by more than 50%. This makes it possible to reduce the intensity of light in the pupil surface that has been reflected by defective beam deviating elements.

An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.

An illumination system for illuminating a mask in a microlithographic projection exposure apparatus includes an array of mirrors or other beam deflecting elements. Each beam deflecting element produces on the surface a projection light spot at a position that is variable by changing a deflection angle produced by the beam deflecting element. A spot shape measuring unit measures the shapes of spots which are produced on the spot measuring unit by the beam deflecting elements. The spot shape measuring unit is arranged outside of every possible path projection light is allowed to take between the array and the mask. A control unit controls the beam deflecting elements such that, at a given instant during an exposure operation of the apparatus, at least one beam deflecting element directs projection light exclusively on the spot shape measuring unit, and at least some beam deflecting elements direct projection light exclusively on the surface.

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Oberkochen, Germany

Andras G Major