Advanced Micro Devices Corporation

Andr&eacute; Holfeld

Jan Raebiger

Dirk Wollstein

Methods and systems are disclosed that allow an adjustment of an electrical property of a field effect transistor during the fabrication of the device. A manufacturing process downstream of the gate electrode formation step is controlled in response to the measured gate length such that a deviation of the measured gate length is, at least partially, compensated by a subsequent process step in order to maintain the electrical property of the completed field effect transistor within specified tolerances. In one illustrative embodiment, the effective gate length that is defined as the lateral distance of lightly doped regions is controlled so as to substantially maintain it. Moreover, a controller is disclosed that allows the manufacturing of a field effect transistor on a run-to-run basis by which variations of the gate length are at least partially compensated.

Growing community of inventors

Schirgiswalde, Germany

André Holfeld

Growing community of inventors

Schirgiswalde, Germany

Andr&eacute; Holfeld

André Holfeld