Robert Boschgmbh

Graham, Andrew

Chen, Po-jui

O'brien, Gary

Waffenschmidt, Sybille

Lammel, Gerhard

Feyh, Ando

Ando Feyh

Gary O'Brien

Gary Yama

Fabian Purkl

Andrew Graham

Ashwin K Samarao

Po-Jui Chen

Franz Laermer

Christina Leinenbach

Christoph Schelling

Simon Armbruster

Hubert Benzel

Ricardo Ehrenpfordt

Axel Franke

Silvia Kronmueller

Gerhard Lammel

Michael Stumber

Alexander Buhmann

Ralf Reichenbach

Andre Gerlach

Ulrike Scholz

Mathias Bruendel

Dick Scholten

Sonja Knies

Christian Rettig

Jochen Reinmuth

Tjalf Pirk

Tino Fuchs

Matthias Illing

Achim Trautmann

Paul Farber

Marco Lammer

Daniel Herrmann

Oleg Jakovlev

Sam Kavusi

Frank Schatz

Reinhard Neul

Daniel Christoph Meisel

Bongsang Kim

Markus Ulm

Heiko Stahl

Johan Vanderhaegen

Arnim Hoechst

Julian Bartholomeyczik

Ingo Herrmann

Bernhard Opitz

Bernhard Gehl

Oliver Wolst

Thomas Wagner

Georg Bischopink

Stefan Zimmermann

Neil A Davies

Fernando Suarez Lainez

Martin Eckardt

Frank Freund

Julia Cassemeyer

Thorsten Mueller

Ronny Schmid

John Provine

Hannes Wolf

Christian Maeurer

Hannes Rose

Henar Martin Rodriguez

Roberto Ferrozzi

Sibylle Waffenschmidt

Manuel Engesser

Gery O`BRIEN

Sybille Waffenschmidt

A device for monitoring a mobile object having a sensor unit, which has at least one sensor for monitoring the mobile object. The device additionally has a processing unit, which is designed to record measured values from a sensor unit within a time span. The processing unit is designed to determine, as a function of the recorded measured values, in what kind of process in a transport chain the object is involved. A method for monitoring a mobile object is also described.

Device and method for monitoring a mobile object

A sensor device, including a sensor casing, inside of which one sensor or multiple sensors is/are situated, a holder for fastening the sensor casing to a traffic infrastructure, a processor being situated in the sensor casing, which is designed to detect, based on sensor data from one or multiple of the one sensor or of the multiple sensors, an impermissible application of force on the sensor casing.

Sensor device

A device for generating thermal images includes a low resolution infrared (IR) sensor supported within a housing and having a field of view. The IR sensor is configured to generate thermal images of objects within the field of view having a first resolution. A spatial information sensor supported within the housing is configured to determine a position for each of the thermal images generated by the IR sensor. A processing unit supported within the housing is configured to receive the thermal images and to combine the thermal images based on the determined positions of the thermal images to produce a combined thermal image having a second resolution that is greater than the first resolution.

Methods to combine radiation-based temperature sensor and inertial sensor and/or camera output in a handheld/mobile device

A Li-ion battery in one embodiment includes a lithium based compound in a cathode, a first porous silicon portion in an anode, and a layer of atomic layer deposited (ALD) alumina coating the first porous silicon portion and contacting the cathode.

Li-ion battery with alumina coated porous silicon anode

A sensor device package includes a pressure sensor and a humidity sensor mounted on the same substrate and in the same housing with light protection for the pressure sensor a media opening for gas exchange for the humidity sensor. Light protection and rapid response times are provided through strategic positioning of the media opening, strategic arrangement of the pressure sensor, humidity sensor, and the media opening, and/or the use of opaque materials.

Combined pressure and humidity sensor

In one embodiment, a MEMS sensor includes a first fixed electrode in a first layer, a cavity defined above the first fixed electrode, a membrane extending over the cavity, a first movable electrode defined in the membrane and located substantially directly above the first fixed electrode, and a second movable electrode defined at least partially within the membrane and located at least partially directly above the cavity.

MEMS pressure sensor with multiple membrane electrodes

A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (e.g., sidewall coverage) or completely with polyimide (Pl) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.

Trench based capacitive humidity sensor

A system and method for forming a sensor device with a buried first electrode includes providing a first silicon portion with an electrode layer and a second silicon portion with a device layer. The first silicon portion and the second silicon portion are adjoined along a common oxide layer formed on the electrode layer of the first silicon portion and the device layer of the second silicon portion. The resulting multi-silicon stack includes a buried lower electrode that is further defined by a buried oxide layer, a highly-doped ion implanted region, or a combination thereof. The multi-silicon stack has a plurality of silicon layers and silicon dioxide layers with electrically isolated regions in each layer allowing for both the lower electrode and an upper electrode. The multi-silicon stack further includes a spacer that enables the lower electrode to be accessible from a topside of the sensor device.

System and method for forming a buried lower electrode in conjunction with an encapsulated MEMS device

A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

Titanium nitride for MEMS bolometers

A microelectromechanical sensor module includes a sensing mechanism for measuring an acceleration, pressure, air humidity or the like, a control mechanism for controlling the sensing mechanism, an energy supply mechanism for supplying the sensor module with energy, and a transmission mechanism for transmitting signals of the sensing mechanism. At least three of the mechanisms are integrated at the chip level in at least one chip in each case. A corresponding method is implemented to produce the microelectromechanical sensor module.

Microelectromechanical sensor module and corresponding production method

A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region.

Micromechanical sensor device with movable gate and corresponding production method

A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an Oplasma etching process.

CMOS bolometer

In one embodiment, a portable temperature sensing system includes a portable housing configured to be carried by a user, a microelectrical mechanical system (MEMS) thermal sensor assembly supported by the housing and including an array of thermal sensor elements, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, determine an average sensed temperature based upon the signals, and render data associated with the determined average sensed temperature.

Portable device with temperature sensing

A sensing assembly device includes a substrate, a chamber above the substrate, a first piezoelectric gyroscope sensor positioned within the chamber, and a first accelerometer positioned within the chamber.

Chip level sensor with multiple degrees of freedom

A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.

Resistive MEMS humidity sensor

Growing community of inventors

Palo Alto, CA, United States of America

Ando Feyh