Qunano Ab

Anders Mikkelsen

Lars Samuelson

Jonas Ohlsson

Werner Seifert

Claes Thelander

Thomas Mårtensson

Bernhard Mandl

The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

Method for metal-free synthesis of epitaxial semiconductor nanowires on si

The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire () forming a current transport channel, one or more shell layers () arranged around at least a portion of the nanowire (), and nano-sized charge trapping centers () embedded in said one or more shell layers (), and one or more gate electrodes () arranged around at least a respective portion of said one or more shell layers (). Preferably said one or more shell layers () are made of a wide band gap material or an insulator. The charge trapping centers () may be charged/written by using said one or more gate electrodes () and a change in an amount of charge stored in one or more of the charge trapping centers () alters the conductivity of the nanowire ().

Nanostructured memory device

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Arlöv, Sweden

Anders Mikkelsen