Globalfoundries Inc.

Anbu Selvam K M Mahalingam

Craig Child

Andy C Wei

Guillaume Bouche

Roderick Alan Augur

Sunil Kumar Singh

Jason Eugene Stephens

Xiang Hu

Somnath Ghosh

Linus Jang

Akshey Sehgal

Mark Alexander Zaleski

Shyam Pal

David Michael Permana

Qanit Takmeel

The present disclosure relates to semiconductor structures and, more particularly, to via structures and via patterning using oblique angle deposition processes. The method includes: depositing a material on a lower wiring layer; forming one or more openings in the material; filling the one or more openings with a conductive material; growing via structures on the conductive material; forming interlevel dielectric material on the via structures; and forming an upper wiring layer on the interlevel dielectric material and in contact with the via structures.

Via structures and via patterning using oblique angle deposition processes

Semiconductor devices and methods of fabricating the semiconductor devices with chamfer-less via multi-patterning are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a trench etch into a portion of the intermediate semiconductor device to form a trench pattern; depositing an etching stack; performing at least one via patterning process; and forming at least one via opening into a portion of the intermediate semiconductor device. An intermediate semiconductor device is also disclosed.

Devices with chamfer-less vias multi-patterning and methods for forming chamfer-less vias

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Mechanicville, NY, United States of America

Anbu Selvam K M Mahalingam