Infineon Technologies Ag

Anatoly Sotnikov

Markus Zundel

Jens Peter Konrath

Adolf Koller

Thomas Krotscheck Ostermann

Gunther Mackh

Jochen Hilsenbeck

Stefan Mieslinger

Maria Heidenblut

Boris Mayerhofer

Christian Westermeier

A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Preliminary trenches formed in kerf regions for die singulation

In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.

Singulation processes

Growing community of inventors

Neubiberg, Germany

Anatoly Sotnikov