Bell Communications Research, Inc.

Rockwell Automation Germany Gmbh & Co Kg

Anatoly Grinberg

Alexander Kastalsky

Dirk Lorenz

A semiconductor device implemented on a substrate which includes a first layer of semiconductor material of a first conductivity type composed of a semiconductor material and forming a first active region of said device, and a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on the first layer and forming a second active region of the device. A third layer of semiconductor material is provided composed of a relatively narrow energy bandgap material disposed on the second layer and having an energy band step such that carriers are confined in that layer. A fourth layer of semiconductor material of a first conductivity type is further provided composed of a relatively wide energy bandgap material disposed on the third layer and forming a third active region of the device. The resulting structure provides a new type of transistor action that combines the properties of both bipolar and field effect transistors in a three terminal electronic device.

Growing community of inventors

Minneapolis, MN, United States of America

Anatoly Grinberg