D2s, Inc.

Anatoly Aadamov

Akira Fujimura

Ingo Bork

Eldar Khaliullin

Kazuyuki Hagiwara

Ryan Pearman

Robert C Pack

A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.

Method and system for forming patterns using charged particle beam lithography

A method for forming a pattern on a surface using charged particle beam lithography is disclosed, where the shots in an ordered set of input shots are modified within a subfield to reduce either a thermal variation or a maximum temperature of the surface during exposure by the charged particle beam writer. A method for fracturing or mask data processing is also disclosed, where an ordered set of shots is generated which will expose at least one subfield of a surface using a shaped beam charged particle beam writer, and where a temperature or a thermal variation generated on the surface during the exposure of one subfield is calculated. Additionally, a method for forming a pattern on a surface with an ordered set of shots using charged particle beam lithography is disclosed, in which a blanking period following a shot is lengthened to reduce the maximum temperature of the surface.

Method and system for improving critical dimension uniformity using shaped beam lithography

A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is modified to lower the calculated sensitivity. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a resist-coated reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle.

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Palo Alto, CA, United States of America

Anatoly Aadamov