Sela Semiconductor Engineering Laboratories Ltd.

Sela—solutions Enabling Nano Analysis Ltd.

Anatoli Eizner

Vladimir Zheleznyak

A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.

System and method of cleaving of buried defects

A method for depth controlled ion milling, the method may include (a) ion milling a calibrated area and a target area; wherein the ion milling comprises exposing an interior of the calibrated area to provide an exposed interior of the calibrated area; wherein the target area comprises a buried region of interest that is positioned at a certain depth; wherein the calibrated area comprises a certain layer that is positioned at the certain depth; wherein the certain layer is visually distinguishable from another layer of the calibrated area that is precedes the certain layer; (ii) monitoring a progress of the milling by viewing the exposed interior of the calibrated area; and (iii) controlling of the ion milling based on an outcome of the monitoring.

Growing community of inventors

Haifa, Israel

Anatoli Eizner