Kla Tencor Corporation

Anat Marchelli

John Charles Robinson

Amir Widmann

Pavel Izikson

Mike Adel

Dongsub Choi

Amnon Manassen

Vladimir Levinski

Mark Ghinovker

Yoel Feler

Nuriel Amir

Inna Tarshish-Shapir

Boris Efraty

Sigalit Robinzon

Berta Dinu

Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers

Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.

Method, system, and user interface for metrology target characterization

Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one tot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

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Migdal Haemek, Israel

Anat Marchelli