Applied Materials, Inc.

Ananthkrishna Jupudi

Yueh Sheng Ow

Sarath Babu

Junqi Wei

Yuichi Wada

Kelvin Boh

Kang Zhang

Preetham P Rao

Vinodh Ramachandran

Ribhu Gautam

Cheng-Hsiung Matt Tsai

Tuck Foong Koh

Prashant Agarwal

Kirankumar Neelasandra Savandaiah

Glen T Mori

Thanh X Nguyen

Ke Chang

Aksel Kitowski

Arkajit Roy Barman

Loke Yuen Wong

Rajesh Kumar Putti

Srinivas Gandikota

Takashi Shimizu

Xianmin Tang

Muhammad M Rasheed

Wei D Wang

Yong Cao

Manjunatha P Koppa

Kevin Vincent Moraes

Zhendong Liu

Zhitao Cao

Mukund Sundararajan

Nuno Yen-Chu Chen

Saket Rathi

Kai Liang Liew

Wen Long Favier Shoo

Shashidhara Patel

Sai Kumar Kodumuri

Kelvin Tai Ming Boh

Wei W Wang

Guan Huei See

Alan A Ritchie

Sriskantharajah Thirunavukarasu

Jacob Newman

Ruiping Wang

Song-Moon Suh

Donny Young

Cheng-Hsiung Matthew Tsai

Ying W Wang

Xin Wang

Hiroyuki Takahama

Jun-Liang Su

Fang Jie Lim

Felix Deng

Clinton Goh

Chin Wei Tan

Manjunath H Venkataswamappa

Robert Dinsmore

Kok Wei Tan

Kok Seong Teo

Zhang Kang

Eiji Asahina

Hadi Bin Amir Muhammad

Lean Wui Koh

Praveen Kumar Choragudi

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises performing a first vacuum processing procedure on a substrate, obtaining temperature measurements of the substrate from a vacuum thermocouple, obtaining temperature measurements of the substrate from a non-contact infrared sensor, calibrating the non-contact infrared sensor based on the temperature measurements from the vacuum thermocouple and the temperature measurements from the non-contact infrared sensor, and performing a second vacuum processing procedure on the substrate using the calibrated non-contact infrared sensor.

In-situ calibration/optimization of emissivity settings in vacuum for temperature measurement

Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a holder in a bonding chamber of a multi-chamber processing tool; transferring the holder from the bonding chamber to a cleaning chamber of the multi-chamber processing tool; cleaning the one or more dirty tools in the cleaning chamber to produce one or more cleaned tools; inspecting the one or more cleaned tools in an inspection chamber of the multi-chamber processing tool; and transferring the one or more cleaned tools to the bonding chamber.

On-board cleaning of tooling parts in hybrid bonding tool

Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O, CO, CO, and water.

Shutter disk

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.

High conductance inner shield for process chamber

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

Preclean chamber upper shield with showerhead

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Low warpage curing methodology by inducing curvature

Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

Methods and apparatus for reducing defects in preclean chambers

Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

Solid-state power amplifiers with cooling capabilities

Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

Batch substrate support with warped substrate capability

Methods and apparatus for a cooling plate for solid state power amplifiers are provided herein. In some embodiments, a cooling plate of a solid state power amplifier includes a body having a rectangular shape, a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall; a plurality of holes disposed on a first side of the body configured to mount a plurality of heat generating microelectronic components; and a channel having a plurality of segments disposed within the body and extending from a first port disposed on the first sidewall to a second port disposed on the first sidewall.

Water cooled plate for heat management in power amplifiers

Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Apparatus and systems for substrate processing for lowering contact resistance

Methods and apparatus for reducing leakage of microwaves at a slit valve of a process chamber. A multi-frequency resonant choke around the slit valve prevents microwave energy from a band of frequencies from escaping from the slit valve. The multi-frequency resonant choke may have a sloping bottom surface or a serrated bottom surface to enable multiple frequencies to resonant in the choke, canceling a range of microwave frequencies at gaps formed by a slit valve gate.

Methods and apparatus for microwave leakage reduction for semiconductor process chambers

An apparatus for determining temperatures of substrates in microwave and/or vacuum environments. A substrate holder with a plurality of support pins includes a temperature sensor assembly with at least a portion of a surface with a phosphorous coating is configured to be inserted in at least one pin support position from an inner area of the substrate holder and in at least one pin support position from an outer area of the substrate holder. The temperature sensor assembly includes a temperature sensor pin with a spring that is microwave transparent. The temperature sensor pin is made of a material with a thermal conductivity greater than approximately 200 W/mK and a low thermal mass which is microwave transparent. An optical transmission assembly is embedded into at least a portion of the substrate holder to receive light emissions from a surface of the temperature sensor pin.

Apparatus for measuring temperature in a vacuum and microwave environment

Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

Inline microwave batch degas chamber

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Singapore, Singapore

Ananthkrishna Jupudi