Lam Research Corporation

Ananth Indrakanti

Eric A Hudson

Bhaskar Nagabhirava

Peng Wang

Rajinder Dhindsa

Tom K Choi

Alan John Jensen

A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.

Method for forming self-aligned contacts/vias with high corner selectivity

A method for etching features in an etch layer in a plasma processing chamber is provided. An etch gas is flowed into the plasma processing chamber. A top outer electrode is maintained at a temperature of at least 150&#xb0; C. during the etching of the features. The etch gas is formed into a plasma, which etches the etch layer.

Method to increase mask selectivity in ultra-high aspect ratio etches

An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the low-k material while maintaining chuck temperature at about 45 to 80&#xb0; C. and (b) metal hard mask rounding and Ti-based residues removal while maintaining chuck temperature at about 90 to 130&#xb0; C.

Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization

A multi-step etch process wherein elliptical via openings and trench openings are formed in a dielectric layer includes supporting a multi-layer film stack on a temperature controlled electrostatic chuck in a plasma etch reactor. The multi-layer film stack has a dielectric layer and a patterned metal hard mask layer above the dielectric layer. An etchant gas is supplied to the plasma etch reactor. The etchant gas is energized into a plasma state, and via openings in a photo resist are transferred into a planarization layer and then into elliptical portions of the trench openings in a patterned hard mask layer while maintaining the chuck at a temperature of about 30 to 50&#xb0; C. The elliptical openings are extended into a lower layer of the hard mask and into an underlying dielectric layer while maintaining the chuck at a temperature of 20&#xb0; C. or below. After stripping the planarization layer to expose the trench pattern in the hard mask, trench openings are formed in the dielectric layer while maintaining the chuck at a temperature of about 55&#xb0; C. or higher. The process can thus provide enlarged via contact areas while etching trenches with pitches of 80 nm or less.

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Fremont, CA, United States of America

Ananth Indrakanti