Lucent Technologies Inc.

At+t Corp.

Agere Systems Inc.

Agere Systems Guardian Corp.

Other

Ananth Dodabalapur

Howard Edan Katz

John A Rogers

Richart Elliott Slusher

Timothy M Miller

Venkataram Reddy Raju

Lewis Josiah Rothberg

Zhenan Bao

Rahul Sarpeshkar

Luisa Torsi

Edwin Arthur Chandross

Alan Gelperin

Attila Mekis

Brian Keith Crone

Robert William Filas

Robert Cort Haddon

Michael Louis Steigerwald

Marko Strukelj

Rebecca Jordan

Yen-Yi Lin

Yi Feng

Joerg Baumbach

Magnus Rolf Berggren

Magnus Berggren

A two-dimensional photonic crystal coupler is disclosed, together with a cross-coupled laser structure that is based on a two-dimensional photonic crystal coupler stage. Unlike traditional grating couplers, this two-dimensional photonic crystal coupler can couple light into a single or a plurality of discrete directions in the far-field, i.e., the output light may be unidirectional or discrete. The coupler can be integrated with one-dimensional lasers, a distributed feedback laser, a distributed Bragg reflector laser, and integrated on the same waveguide as the lasers. A resonant cavity coupler design improves the coupling efficiency of two-dimensional photonic crystal-based couplers.

Article comprising a two-dimensional photonic crystal coupler and method of making the same

An apparatus having a circuit coupled to the gate contact of field effect transistor wherein the transistor's gate includes a dielectric layer of which at least a portion is an organic dielectric. The circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the dielectric layer. The field effect transistor has a semiconductor layer with a conductive path whose conductivity changes for a given Vin response to storing the charge. The circuit may produce one or more dissipation voltage pulses having a voltage of opposite sign to the one or more storage pulses, that cause dissipation of charge stored in the dielectric layer. Further disclosed are a memory and a method of electronically storing and reading information, both utilizing the organic-based polarizable gate transistor apparatus.

Organic polarizable gate transistor apparatus and method

Circuits include at least one-odor sensitive organic transistor having a conduction channel whose conductivity changes in response to certain odors. The organic transistors are interconnected to increase their response to selected odor signals. The organic transistors may be interconnected to form a ring oscillator whose frequency of oscillation changes in response to an odor signal and in which the alternating signal applied to the gate electrodes of the organic transistors enhances their recovery and reduces their drift.

Odor sensor with organic transistor circuitry

An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

Electronic odor sensor

A circuit includes at least one odor-sensitive organic field effect transistor (OFET) having a conduction channel whose conductivity changes in response to certain ambient odors and a feedback loop coupled between an output and an input of the circuit. The feedback loop generates a feedback signal which stabilizes the output signal of the circuit for time drift of the odor-sensitive organic transistor. In one embodiment, the OFET is an integral part of an amplifier and generates input signals to the amplifier in response to certain odors. A selectively enabled switch may be coupled between the output and the input of the amplifier circuit to provide negative feedback that tends to cancel the effect on the amplifier of time drift due to the OFET.

Odor sensing with organic transistors

An article is disclosed having a non-planar surface with a high-resolution pattern formed thereon, particularly a distributed-feedback (DFB) ridge waveguide laser. An elastomeric member having relief patterns on its surface is used to print or mold a pattern directly onto the non-planar surface of the waveguide. A range of materials disposed on such non-planar surfaces can thus be patterned at high resolution to provide devices with sub-micron features at low cost with potential applications in optoelectronics. For example, a plastic laser based on molded organic gain materials may be made.

Article comprising a high-resolution pattern on a non-planar surface and method of making the same

A display apparatus according to our invention comprises a multiplicity of nominally identical smart pixels, a given pixel comprising an organic light emitting diode and an organic or inorganic (e.g., amorphous or polycrystalline Si) pixel FET. The display also comprises drive/compensation circuitry adapted for mitigating or eliminating non-idealities associated with the organic components. Among the non-idealities are variations in mobility and/or threshold voltage of the pixel FET from transistor to transistor, change in mobility and/or threshold voltage with time in a given pixel FET, change over time of the LED characteristics, capacitive signal feed-through through the gate insulator of the pixel FETs by short rise/fall time pulses, poor on-off ratio of the pixel FET, and charge leakage through the gate dielectric. Exemplary drive/compensation circuitry is disclosed.

Display comprising organic smart pixels

A laser structure may be used to fabricate a plastic laser and achieve electrically-driven lasing action. The structure comprises an LED, a waveguide laser, and a substrate disposed between them. The substrate has a first and a second side. Light emitted from the LED is received by the substrate at the first side and concentrated as it is guided with the body of the substrate to the second side, where it is received by the laser. Concentration of the light across the substrate improves the efficiency of the device and leads to lower threshold powers.

Article comprising a plastic laser

Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C,thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.

Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor

The specification describes thin film transistor integrated circuits wherein the TFT devices are field effect transistors with inverted structures. The interconnect levels are produced prior to the formation of the transistors. This structure leads to added flexibility in processing. The inverted structure is a result of removing the constraints in traditional semiconductor field effect device manufacture that are imposed by the necessity of starting the device fabrication with the single crystal semiconductor active material. In the inverted structure the active material, preferably an organic semiconductor, is formed last in the fabrication sequence. In a preferred embodiment the inverted TFT devices are formed on a flexible printed circuit substrate.

Thin film transistors

The specification describes thin film transistor integrated circuits wherein the TFT devices are field effect transistors with inverted structures. The interconnect levels are produced prior to the formation of the transistors. This structure leads to added flexibility in processing. The inverted structure is a result of removing the constraints in traditional semiconductor field effect device manufacture that are imposed by the necessity of starting the device fabrication with the single crystal semiconductor active material. In the inverted structure the active material, preferably an organic semiconductor, is formed last in the fabrication sequence.

A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.

Process for fabricating integrated circuit devices having thin film transistors

A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

Thin-film transistor monolithically integrated with an organic

The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni--P on a base conductor, preferably TiN.sub.x, by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.

A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.

Growing community of inventors

Millington, NJ, United States of America

Ananth Dodabalapur