Intel Corporation

Anant H Jahagirdar

Aaron D Lilak

Mauro J Kobrinsky

Oleg Golonzka

Christopher J Wiegand

Brennen Karl Mueller

Md Tofizur Rahman

Chytra Pawashe

Atul Madhavan

Jinhong Shin

Mengcheng Lu

Myra McDonnell

Abhishek Jain

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a single dielectric layer above a substrate. A plurality of conductive lines is in an upper portion of the single dielectric layer above a lower portion of the single dielectric layer. A carbon dopant region is in the upper portion of the single dielectric layer, the carbon dopant region between adjacent ones of the plurality of conductive lines.

Dielectric capacitance recovery of inter-layer dielectric layers for advanced integrated circuit structure fabrication

Embodiments herein describe techniques for bonded wafers that includes a first wafer bonded with a second wafer, and a stress compensation layer in contact with the first wafer or the second wafer. The first wafer has a first stress level at a first location, and a second stress level different from the first stress level at a second location. The stress compensation layer includes a first material at a first location of the stress compensation layer that induces a third stress level at the first location of the first wafer, a second material different from the first material at a second location of the stress compensation layer that induces a fourth stress level different from the third stress level at the second location of the first wafer. Other embodiments may be described and/or claimed.

Stress compensation for wafer to wafer bonding

Embodiments of the present disclosure describe techniques and configurations associated with modulation of magnetic properties through implantation. In one embodiment, a method includes providing a substrate having an integrated circuit (IC) structure disposed on the substrate, the IC structure including a magnetizable material, implanting at least a portion of the magnetizable material with a dopant and magnetizing the magnetizable material, wherein said magnetizing is inhibited in the implanted portion of the magnetizable material. Other embodiments may be described and/or claimed.

Modulation of magnetic properties through implantation and associated structures

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Hillsboro, OR, United States of America

Anant H Jahagirdar