General Electric Company

Lumination LLC

Ge Lighting Solutions LLC

Current Lighting Solutions, LLC

Gelcore, LLC

Anant Achyut Setlur

Alok Mani Srivastava

Holly Ann Comanzo

James Edward Murphy

Emil Vergilov Radkov

Robert Joseph Lyons

Florencio Garcia

William Winder Beers

Prasanth Kumar Nammalwar

Ashfaqul Islam Chowdhury

Srinivas Prasad Sista

Ljudmil Slavchev Grigorov

Joseph John Shiang

Venkatesan Manivannan

Stanton Earl Weaver, Jr

Nagaveni Karkada

Sergio Paulo Martins Loureiro

Digamber Gurudas Porob

Charles Adrian Becker

Claire Susan Henderson

Thomas Frederick Soules

Dan Hancu

Mohan Manoharan

Fangming Du

Samuel Joseph Camardello

Daniel Darcy Doxsee

Shankar Madras Venugopal

Gopi Chandran

James Anthony Ruud

Venkat Subramaniam Venkataramani

Victor Petrovich Ostroverkhov

Guanghua Wang

Mark Allen Cheverton

Thomas Francis McNulty

John W Devitt

Thomas Elliot Stecher

Oltea Puica Siclovan

Darryl Stephen Williams

Satya Kishore Manepalli

Chen-Lun Hsing Chen

Stanley John Stoklosa

Luke Nathaniel Brewer

Mukunda Srinivas Adyam

Anirudha Rajendra Deshpande

Ilona Elisabeth Hausmann

Marisa L Goodin, Legal Representative

Linda Jane Valyou Briel

Ramachandran Gopi Chandran

Anil Raj Duggal

William Dwight Gerstler

Glen Harold Kirby

Thomas Bert Gorczyca

Hendrik Pieter Jacobus De Bock

Steven Jude Duclos

James William Bray

Julin Wan

James Anthony Brewer

Daniel Gene Dunn

Laszlo Balazs

Stanton Earl Weaver

Reza Sarrafi-Nour

Jared Hogg Weaver

Srinath K Aanegola

Haochuan Jiang

Gopi Chandran Ramachandran

Yan Gao

Xiao-Dong Sun

Nicholas Edward Antolino

Juan Borja

Sergio Martins Loureiro

Cherian Jacob

Ravikumar Hanumantha

Feng Jin

Katalin Toth

Madras Venugopal Shankar

Nathaniel Patrick Brown

Guruvenket Srinivasan

Michael Greci

Zena Brown

Taryn Elizabeth Hewitt

William Jordan Heward

Vankatesan Manivannan

Linda Briel

Elena Alexandrovna Bachniak

Prasanth Kumar

Rebecca A Bompiedi

Ramesh Rao Sathyanarayan

Josesph Shiang

Robert John Cleaver

Pransanth Kumar Nammalwar

Kevin Alan David

Environmental barrier coatings including a bondcoat layer including silicon and a rare earth silicate-based hermetic layer and rare earth silicate-based non-hermetic layer are provided. The rare earth silicate-based hermetic layer is deposited on the bondcoat via a thermal spray process and has an elastic modulus ranging from 100 GPa to 180 GPa. The at least one rare earth silicate-based non-hermetic layer is deposited on the rare earth silicate-based hermetic layer and has an elastic modulus ranging from 50 GPa to 100 GPa. Coated gas turbine engine components and methods for coating gas turbine engine components are also provided.

Environmental barrier coatings

A method for modifying a composite component may include positioning a barrier segment between an infiltrated segment of the composite component and a green segment to form an assembly; and initiating an infiltration process. The barrier segment may have a barrier segment permeability that is lower than a permeability of the infiltrated segment, a permeability of the green segment, or both. A composite component may include an infiltrated segment infiltrated with a molten material during a prior infiltration process; a green segment that is uninfiltrated; and a barrier segment having a microstructure different from the infiltrated segment, the green segment, or both. The microstructure of the barrier segment may be configured to slow a flow of material between the infiltrated segment and the green segment during a subsequent infiltration process.

Composite components and methods for preventing flow from infiltrated component during re-infiltration

An aerospace vehicle including: a body, wherein the body is configured to generate heat during operation; a coating disposed over at least a portion of the body, the coating being configured to shift a frequency of at least one wavelength of the heat generated by the body from a first frequency to a second frequency having higher transmissivity relative to a neighboring medium surrounding the body as compared to the first frequency.

Aerospace vehicles with coatings for heat radiation and associated methods

A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mndoped phosphor, wherein the lighting apparatus has a color shift of ≤1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Color stable red-emitting phosphors

A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mndoped phosphor, wherein the lighting apparatus has a color shift of &#x2264;1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25&#xb0; C.

A device including an LED light source optically coupled to a phosphor selected from [Y,Gd,Tb,La,Sm,Pr,Lu][Al,Ga]O:Ce(wherein 0&#x3c;a&#x3c;0.5), beta-SiAlON:Eu, [Sr,Ca,Ba][Al,Ga,In]S:Eu, alpha-SiAlON doped with Euand/or Ce, CaCeEuAl[Mg,Zn]SiN, (where 0&#x3c;h&#x3c;0.2, 0&#x3c;r&#x3c;0.2), Sr(LiAlN):Eu, [Ca,Sr]S:Euor Ce, [Ba,Sr,Ca]SiN:Eu(wherein 2b+4g=3m), quantum dot materials, and combinations thereof; and a green-emitting U-doped phosphor having a composition selected from the group consisting of U-doped phosphate-vanadate phosphors, U-doped halide phosphors, U-doped oxyhalide phosphors, U-doped silicate-germanate phosphors, U-doped alkali earth oxide phosphors, and combinations thereof, is presented.

Green-emitting phosphors and devices thereof

Synthesizing a color stable Mndoped phosphor by contacting a gaseous fluorine-containing oxidizing agent with a precursor of: ABCDX:Mn; ABCDXY:Mn; AGMnMgLiFO; or AZF:Mn. Where A is Li, Na, K, Rb, Cs, or a combination; B is Be, Mg, Ca, Sr, Ba, or a combination; C is Sc, Y, B, Al, Ga, In, Tl, or a combination; D is Ti, Zr, Hf, Rf, Si, Ge, Sn, Pb, or a combination; X is F or a combination of F and one of Br, Cl, and I; Y is O, or a combination of O and one of S and Se; Ais Na or K, or a combination; G is Al, B, Sc, Fe, Cr, Ti, In, or a combination; Z is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, In, or a combination.

Process for improved halide materials

Processes for producing stable Mndoped phosphors include dispersing a compound of formula I in a solution comprising a compound of formula II to form a dispersion; applying pressure to the dispersion at a temperature less than 200&#xb0; C. to form a phosphor product; and contacting the phosphor product with a fluorine-containing oxidizing agent in gaseous form at an elevated temperature;

Processes for preparing stable red-emitting phosphors

A device including an LED light source optically coupled to a green-emitting U-doped phosphor having a composition selected from the group consisting of U-doped phosphate-vanadate phosphors, U-doped halide phosphors, U-doped oxyhalide phosphors, U-doped silicate-germanate phosphors, U-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).

A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mndoped phosphor and a quantum dot material, each of the color stable Mndoped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mndoped phosphor after exposure to a light flux of at least 20 w/cmat a temperature of at least 50 degrees Celsius for at least 21 hours is &#x2264;4%. A backlight device including the lighting apparatus is also presented.

Lighting apparatus including color stable red emitting phosphors and quantum dots

A process for treating a luminescent halogen-containing material includes contacting the luminescent halogen-containing material with an atmosphere comprising a halogen-containing oxidizing agent for a period of at least about two hours. The luminescent halogen-containing material has a composition other than

A phosphor composition is derived from combining KSiF:Mnin solid form with a saturated solution of a manganese-free complex fluoride including a composition of formula I: A[MF], where A is selected from Na, K, Rb, and combinations thereof and M is selected from Al, Ga, In, Sc, Y, Gd, and combinations thereof. The composition of formula I: A[MF] has a water solubility lower than a water solubility of KSiF. A lighting apparatus including the phosphor composition is also provided.

Moisture-resistant phosphor compositions and associate methods

Processes for preparing color stable red-emitting phosphors include contacting a complex fluoride phosphor of formula I with a first fluorine-containing oxidizing agent in gaseous form at a first temperature ranging from 200&#xb0; C. to 700&#xb0; C. to form a first product phosphor, contacting the first product phosphor in particulate form with a solution of a compound of formula II in aqueous hydrofluoric acid to form a treated phosphor, and contacting the treated phosphor with a second fluorine-containing oxidizing agent in gaseous form at a second temperature &#x3c;225&#xb0; C.,AMF:MN&#x2003;&#x2003;IAMF&#x2003;&#x2003;IIwherein A is independently at each occurrence Li, Na, K, Rb, Cs or a combination thereof, M is independently at each occurrence Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof, x is absolute value of the charge of the MFion; and y is 5, 6 or 7.

Processes for preparing color stable red-emitting phosphors

A method of monitoring a surface temperature of a hot gas path component includes directing an excitation beam having an excitation wavelength at a layer of a sensor material composition deposited on a hot gas path component to induce a fluorescent radiation. The method includes measuring fluorescent radiation emitted by the sensor material composition. The fluorescent radiation includes at least a first intensity at a first wavelength and a second intensity at a second wavelength. The surface temperature of the hot gas path component is determined based on a ratio of the first intensity at the first wavelength and the second intensity at the second wavelength of the fluorescent radiation emitted by the sensor material composition.

Methods for monitoring strain and temperature in a hot gas path component

Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including InGaAlN, wherein 0&#x2264;i; 0&#x2264;j; 0&#x2264;k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C-Calcohol, a C-Cketone, a C-Cacetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Methods for fabricating devices containing red line emitting phosphors

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Anant Achyut Setlur