International Business Machines Corporation

Ananda H Kumar

Lester W Herron

George Czornyj

Heinz O Steimel

Robert W Nufer

Rao R Tummala

Kenneth Chang

Govindarajan Natarajan

Sarah Huffsmith Knickerbocker

Srinivasa S Reddy

Nunzio DiPaolo

Peter W McMillan

Sampath Purushothaman

Eric D Perfecto

Sudipta Kumar Ray

Chandrika Prasad

Mukta S Farooq

Kris V Srikrishnan

Renee L Weisman

Raj N Master

Umar M Ahmad

Richard A Bates

Lovell B Wiggins

Bernard Schwartz

Nanik Bakhru

Michael A Fury

Avinash S Adwalpalker

Marvin S Pitler

Suryanarayana Mukkavilli

Albert Amendola, Deceased

Thomas R Vance

An electrical interconnect structure for connecting a substrate to the next level of packaging or to a semiconductor device. The interconnect structure includes at least two layers of polymeric material, one of the layers having a capture pad and the second of the layers having a bonding pad electrically connected to the capture pad. The bonding pad and the second layer of polymeric material are at the same height so that the bonding pad is level with the second layer of polymeric material. Finally, there is a cap of electrically conducting metallization on the bonding pad and extending beyond the second layer of polymeric material. The cap is of a different composition than the bonding pad.

Interconnect structure having improved metallization

A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of:

Method of making a multilayer thin film structure

The present invention provides a packaging semiconductor structure and method for obtaining same. The structure is comprised of at least one level of dielectric and metallurgy layers. The at least one level is comprised of a wiring metallurgy plane and a 'through-via' plane of interconnecting metallurgy in association with both one and two layers of polymeric dielectric materials. The self-alignment method of fabrication of the level provides a streamlined technique wherein stringent masking and alignment requirements are relaxed, undue processing such as at least one polishing step is eliminated and a structure having adhesive integrity is fabricated.

Layer thin film wiring process featuring self-alignment of vias

A method for promoting adhesion of cofired copper-based metallurgy and glass ceramic dielectric materials. The method includes the step of adding powder of an alloying metal to the copper based metallurgy prior to firing. A paste which exhibits superior adhesion to glass ceramics includes an organic carrier, copper powder, and an alloying metal, which may be a non-copper metal powder or a copper-metal alloy. It is preferred that of the metal in the paste, the copper should make up 80-99 weight percent and the alloying metal should make up 1-20 weight percent.

Method for fabricating superconductor packages

Disclosed is a ceramic substrate having a protective coating on at least one surface thereof which includes:

Ceramic substrate having a protective coating thereon and a method for

There is disclosed a sintering arrangement for enhancing the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate is sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.

Sintering arrangement for enhancing removal of carbon from ceramic

Multi layer thin film wiring process featuring self-alignment of vias

There is disclosed the enhancement of the removal of carbon from multilayer ceramic substrate laminate during the sintering thereof. A multilayer ceramic substrate laminate having metallic lines and vias is provided with a reducible metal oxide in close proximity to the substrate laminate. The multilayer ceramic substrate laminate contains a polymeric binder which upon heating depolymerizes into carbon. The substrate laminate is sintered in an atmosphere which is reducing with respect to the reducible metal oxide and which is oxidizing with respect to the carbon.

Enhanced removal of carbon from ceramic substrate laminates

In a maskless metal cladding process for plating an existing metallurgical pattern, a protective layer is utilized to isolate those areas of underlying metallurgy on which additional metal plating is not desired. The layer acts as an isolation barrier to protect the underlying metallurgy from deposition and subsequent diffusion of the heavy metal overlay. The composition of the protective layer is selected as one having sufficient mechanical integrity to withstand process handling and support the gold overlay and having the thermal integrity to withstand the high temperatures reached during metal sputtering and diffusion processes. The isolation barrier layer has an organic component as a binder which thermally decomposes, either in a heating step before metal deposition or during the diffusion cycle, leaving no carbonaceous residue but leaving an inert, inorganic standoff to support the metal. After diffusion of the metal, the remaining inorganic standoff layer, overlying metal and any undiffused metal remaining on the non-patterned substrate is easily removed by a standard technique, such as ultrasonics.

Diffusion isolation layer for maskless cladding process

Disclosed is a method for repairing opens in thin film conductor lines on a substrate, preferably a multi-layered ceramic substrate. An unpatterned repair metal film is placed over a general area of open defects in conductive lines on a substrate. Preferably, this metal is placed over the conductive lines and opens therein by decal transfer. The assembly is then heated to cause diffusion bonding between the repair metal and conductive lines, but not between the repair metal and substrate. After diffusion bonding, the structure has metal bridges formed across any open defects covered by the repair film and also between adjacent conductive lines. The area of repair is then subjected to ultrasonic energy in a liquid ambient for a time at least long enough to remove metal bridges between adjacent conductive lines, but less than that required to remove repair metal bridges over the opens in the conductive lines. The resultant structure has metal bridges spanning opens in the conductive lines, and no metal bridges between adjacent conductive lines.

Method for repair of opens in thin film lines on a substrate

A process for removing organic materials from an article formed from a slurry of glass and/or ceramic particles, resin binder, and a solvent for the resin binder, the process involving including in the slurry a particulate catalyst selected from the group consisting of Cu, Cu.sub.2 O, CuO, Cu.sub.2 SO.sub.4, CuCl.sub.2, Cu organometallic compounds, and mixtures thereof, the catalyst promoting a rapid and complete removal from the shaped article when heated of the organic materials of the slurry.

Method for removal of carbonaceous residues from ceramic structures

Disclosed is a maskless metal cladding process for plating an existing metallurgical pattern by utilizing a protective layer to isolate those areas of underlying metallurgy on which additional metal plating is not desired. The layer acts as an isolation barrier to protect the underlying metallurgy from deposition and subsequent diffusion of the heavy metal (e.g., gold) overlay. The composition of the protective layer is selected as one having sufficient mechanical integrity to withstand process handling and support the gold overlay and having the thermal integrity to withstand the high temperatures reached during metal sputtering and diffusion processes. The isolation barrier layer has an organic component as a binder which thermally decomposes, either in a heating step before metal deposition or during the diffusion cycle, leaving no carbonaceous residue but leaving an inert, inorganic standoff to support the metal. After diffusion of the metal, the remaining inorganic standoff layer, overlying metal and any undiffused metal remaining on the non-patterned substrate is easily removed by a standard technique, such as ultrasonics.

A molybdenum or tungsten metallurgical pattern is formed on or in a dielectric green sheet. Palladium, nickel, platinum or rhodium is coated on a layer of polyvinyl butyral which is carried on a polyester film. The metal layer of this assembly is laminated to a dielectric green sheet which carries the molybdenum or tungsten metallurgy. The polyester film is stripped off. The resulting assembly is sintered to a fired structure, whereby the polyvinyl butyral is volatilized off and the palladium, nickel, platinum or rhodium is alloyed with the molybdenum or tungsten metallurgy to provide a densified metallurgy whose surface is free of glass.

Method for palladium activating molybdenum metallized features on a

A re-work method for removing extraneous plated metal layer areas from the surface of a ceramic substrate containing refractory metal areas wherein the substrate is heated at a temperature for a time sufficient to strengthen the bond between the plated metal layer and the refractory metal areas while simultaneously reducing the strength of the bond between the extraneous plated metal layer overlying the ceramic and the ceramic, immersing the substrate in a liquid, and applying localized ultrasonic energy in close proximity to the extraneous metal areas to be removed.

Re-work method for removing extraneous metal from cermic substrates

A method of coating or cladding existing metallurgical features of a dielectric substrate by sequentially blanket coating the substrate, inclusive of the metal features, with discrete levels of diverse metals forming alloy systems exhibiting a minimum in the liquidus curve, followed by heating the substrate to a temperature (T.sub.H) at or slightly above the lowest liquidus temperature in the phase diagram of the alloy system and below the melting points of the metal components. During heating to temperature, the metals interdiffuse forming a range of compositions changing with time to form liquid alloys which moves to the substrate surface where it wets and bonds to the metallic features while dewetting the bar substrate surface portions. On cooling the non-adhering portions the alloy can be suitably removed from the substrate surface, as by ultrasonic action, leaving an alloy of the metals strongly bonded only to the pre-existing metallurgical features.

Growing community of inventors

Wappingers Falls, NY, United States of America

Ananda H Kumar