Sandisk Technologies Inc.

Texas Instruments Corporation

Anand Venkitachalam

Jayaprakash Naradasi

Manuel Antonio d'Abreu

Stephen L Skala

Sateesh Desireddi

Bhavin Odedara

Ramakrishnan Subramanian

Jayanth Mysore Thimmaiah

Srinivasa Rao Sabbineni

Sachin Krishne Gowda

Prashant Singhal

Ravi Prakash Arora

An electronic device may receive a supply voltage from another external device, and detect when a level of the supply voltage drops below a threshold. In response, a controller of the electronic device may deactivate an interface configured for communication with the other electronic device. The controller may manage time periods and time period counters to determine when the check whether to reactivate the interface or conclude that the other external device is non-compliant.

Device soft-start management for enumeration problems with USB hosts

Methods and circuits for delay compensation are provided. A data clock may be generated from a peripheral clock. Sample data may be provided in a data signal on a bus in response to an edge of the data clock, where the edge of the data clock is triggered by an initial edge of the peripheral clock. A delay of the data clock relative to the peripheral clock may be selected based on a time difference between the initial edge of the peripheral clock and a time at which the sample data is detected on the bus. A delayed data clock having the selected delay relative to the peripheral clock may be generated. Requested data may be provided on the bus in response to an edge of the delayed data clock.

Delay compensation

A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to, at a second time, determine a second count of storage elements having threshold voltages within the voltage range. The controller is further configured to calculate an updated first reference voltage at least partially based on the first reference voltage, the first count, and the second count.

Systems and methods to update reference voltages in response to data retention in non-volatile memory

A data storage device includes non-volatile memory and a controller. The controller is configured to read first data from the non-volatile memory. The first data indicates a first count of storage elements of the group that have a first activation status when sensed with a first reference voltage at a first time. The controller is configured to read second data from the non-volatile memory. The second data indicates a second count of storage elements of the group that have the first activation status when sensed with the first reference voltage at a second time. The controller is configured to generate an updated first reference voltage at least partially based on a difference between the first count and the second count and based on one or more parameters corresponding to a distribution of threshold voltages of storage elements at the first time.

Systems and methods to update reference voltages of non-volatile memory

In a data storage device that includes a non-volatile memory, a method includes determining that a current error correction code page count (CEC) is at least as large as a target error correction code page count (TEC). The CEC is a page count of error correction code (ECC) pages of data read from the memory during a time period from a previous time to a particular time using a set of reference voltages. In response to the CEC being at least as large as the TEC, the method includes updating a subset of the set of reference voltages conditioned upon a difference between a current mean error count (CMEC) and a previous mean error count being at least as large as a target mean delta error. The CMEC is based on a count of read errors associated with the ECC pages read during the time period.

Systems and methods to initiate updating of reference voltages

A method includes, in a data storage device that includes a non-volatile memory, selecting an updated reference voltage as one of a reference voltage, a first alternate reference voltage and a second alternate reference voltage. The first alternate reference voltage and the second alternate reference voltage are calculated based on the reference voltage and based on a voltage increment. Selection of the updated reference voltage is based on a comparison of error counts, each error count associated with a unique one of the reference voltage, the first alternate reference voltage, and the second alternate reference voltage. The method includes resetting the reference voltage to the updated reference voltage, resetting the voltage increment to a reset voltage increment that is smaller than the voltage increment, and selecting an additional updated reference voltage based on the reset reference voltage and based on the reset voltage increment.

Systems and methods of updating read voltages

A method includes, in a data storage device that includes a non-volatile memory, reading first data values from memory elements of the non-volatile memory using a set of reference voltages that includes a first reference voltage, and determining a first error count associated with the first reference voltage. The method includes reading second data values from the group of memory elements using a set of modified reference voltages that includes a modified first reference voltage, and determining a modified error count associated with the modified first reference voltage. The method includes updating the set of reference voltages to include the first reference voltage or the modified first reference voltage based on a comparison of the error count to the modified error count.

A method in a data storage device with a memory includes receiving bit values to be stored at a set of cells of the memory and interleaving the received bit values to form multiple interleaved groups of data bits according to an adjustable parameter. The method also includes writing the multiple interleaved groups of data bits to the set of cells.

System and method of interleaving data according to an adjustable parameter

Systems and methods to perform distributive ECC operations are disclosed. A method includes, in a controller of a memory device, receiving data including a data block and main error correction coding (ECC) data for the data block. The data block includes a first sub-block of data and first ECC data corresponding to the first sub-block. The method includes initiating a data block ECC operation to process the data block using the main ECC data and initiating a sub-block ECC operation to process the first sub-block using the first ECC data. The method also includes selectively initiating an error location search of the data block ECC operation based on a result of the sub-block ECC operation.

System and method of distributive ECC processing

An isolation cell provided between a first module (which can operate in either a power-up mode or a power down mode) and a second module. According to an aspect of the present invention, the isolation cell can be located to operate drawing power from either the first module or the second module without a floating node in the power-down mode of the first module. Due to the absence of the floating nodes, unneeded power drain is reduced/avoided. In one embodiment, a switch operates to connect power to a series of pair of inverters (propagating the signal from the first module to the second module) when the first module is in power-up mode and disconnects the power in the power-down mode.

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Bengaluru, India

Anand Venkitachalam