Ob Realty, LLC

Thin Film Electronics Asa

Solexel, Inc.

Beamreach-solexel Assets LLC

Anand Deshpande

Mehrdad M Moslehi

Pawan Kapur

Virendra V Rana

Sean M Seutter

Swaroop Kommera

Yen-Sheng Su

Arvind Kamath

David Xuan-Qi Wang

George D Kamian

Anthony Calcaterra

Aditi Chandra

Somnath Mukherjee

Scott R Bruner

Heather Deshazer

Michael Wingert

Mao Ito

Sambhu Kundu

Solene Coutant

Vivek Saraswat

Thom Stalcup

K-Josef Kramer

Gerry Olsen

Kamran Manteghi

A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal. The antenna has (i) an inner terminal continuous with the uppermost layer of metal or connected to the uppermost layer of metal through one or more contacts, and (ii) an outer terminal connected to the uppermost layer of metal through one or more contacts and optionally a metal bridge or strap.

Printed and/or thin film integrated circuit with integrated antenna, and methods of making and using the same

An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M) layer is connected to the first level metal (M) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M). The substantially parallel interdigitated metallization of Mcollects carriers of opposite polarity of the corresponding busbar.

Solar cell metallization

Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers

The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions and passivation layers using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions. Laser damage to the solar cell substrate is removed using an etch.

Aluminum oxide passivation and damage removal for solar cells

Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.

Fabrication methods for monolithically isled back contact back junction solar cells

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Cupertino, CA, United States of America

Anand Deshpande