Osram Opto Semiconductors Gmbh

Ana Kanevce

Stefan Illek

Andreas Biebersdorf

Petrus Sundgren

Christoph Klemp

Felix Feix

Christian Berger

Ines Pietzonka

Laura Kreiner

Thomas Schwarz

Peter Brick

Siegfried Herrmann

Erwin Lang

Karsten Diekmann

Marc Philippens

Michael Brandl

Jean-Jacques Drolet

Andreas Leber

Julia Stolz

Xue Wang

Nicole Heitzer

Marie Assmann

Eva-Maria Rummel

Andreas Rausch

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Optoelectronic component, semiconductor structure and method

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

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Stuttgart, Germany

Ana Kanevce