Taiwan Semiconductor Manufacturing Comp. Ltd.

An-Tai Xu

Pei-Haw Tsao

Huang-Ting Hsiao

Kuo-Chin Chang

Cheng-Hung Tsai

Tsui-Mei Chen

Nai-Cheng Lu

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

Semiconductor structure having counductive bump with tapered portions and method of manufacturing the same

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a semiconductor chip; a substrate facing an active surface of the semiconductor chip; and a conductive bump extending from the active surface of the semiconductor chip toward the substrate, wherein the conductive bump comprises: a plurality of bump segments comprising a first group of bump segments and a second group of bump segments, wherein each bump segment comprises the same segment height in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment comprises a volume defined by the multiplication of the segment height with the average cross-sectional area of the bump segment; wherein the ratio of the total volume of the first group of bump segments to the total volume of the second group of bump segments is between about 0.03 and about 0.8.

Semiconductor structure having a conductive bump with a plurality of bump segments

According to an exemplary embodiment, a method of detecting edge cracks in a die under test is provided. The method includes the following operations: receiving a command signal; providing power from the command signal; providing a response signal based on the command signal; and self-destructing based on the command signal.

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Cupertino, CA, United States of America

An-Tai Xu