General Electric Company

Lockheed Martin Corporation

Momentive Performance Materials Gmbh

An-Ping Zhang

Jesse Berkley Tucker

James William Kretchmer

Rui Chen

Larry Burton Rowland

Anthony John Murray

Nicole Andrea Evers

Edmund B Kaminsky

Steven Francis LeBoeuf

Mark Philip D'Evelyn

Reed Roeder Corderman

Craig Douglas Young

Atanu Saha

Jeffrey Bernard Fedison

Fred Sharifi

Xian-an Cao

Melissa Suzanne Sander

Mark Phillip D'Evelyn

Fazila Seker

Salil Mohan Joshi

Shixue Wen

Edmund Kaminsky, Jr

A biosensing FET device, comprising a plurality of nanostructured SOI channels, that is adapted to operate in solutions having a high ionic strength and provides improves sensitivity and detection. Generally, the biosensing device comprises an underlying substrate layer, an insulator and a semiconductor layer and a plurality of channels in the semiconductor layer comprising a plurality of whole or partially formed nanopores in the channels.

Nanostructured devices for detecting and analyzing biomolecules

A method of making a porous SiOC membrane is provided. The method comprises disposing a SiOC layer on a porous substrate, and etching the SiOC layer to form through pores in the SiOC layer. A porous SiOC membrane having a network of pores extending through a thickness of the membrane is provided.

SiOC membranes and methods of making the same

There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10per cm. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10per cm, and homoepitaxially forming at least one semiconductor layer on the substrate.

Homoepitaxial gallium-nitride-based electronic devices and method for producing same

A device includes a first thermally conductive substrate having a first patterned electrode disposed thereon and a second thermally conductive substrate having a second patterned electrode disposed thereon, wherein the first and second thermally conductive substrates are arranged such that the first and second patterned electrodes are adjacent to one another. The device includes a plurality of nanowires disposed between the first and second patterned electrodes, wherein the plurality of nanowires is formed of a thermoelectric material. The device also includes a joining material disposed between the plurality of nanowires and at least one of the first and second patterned electrodes.

Thermal transfer and power generation devices and methods of making the same

A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.

Method for making GaN-based high electron mobility transistor

A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.

Method of fabricating a MESFET with a sloped MESA structure

SiC metal semiconductor field-effect transistor

A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cmat wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 10per cmand an optical absorption coefficient below about 100 cmat wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

Homoepitaxial gallium-nitride-based light emitting device and method for producing

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Niskayuna, NY, United States of America

An-Ping Zhang