Taiwan Semiconductor Manufacturing Comp. Ltd.

An-Hung Tai

Kuo-Feng Yu

Jian-Hao Chen

Hui-Chi Chen

Yung-Hsiang Chan

Ming-Chi Huang

Shan-Mei Liao

Hsin-Han Tsai

Cheng-Chieh Tu

Yen-Ta Lin

Jui Fu Chueh

In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode formed over a channel region, a first gate dielectric layer is formed over the channel region in the gate space, a second gate dielectric layer is formed over the first gate dielectric layer, one or more conductive layers is formed on the second gate dielectric layer, the second gate dielectric layer and the one or more conductive layers are recessed, an annealing operation is performed to diffuse an element of the second gate dielectric layer into the first gate dielectric layer, and one or more metal layers are formed in the gate space.

Method of manufacturing semiconductor devices and semiconductor devices

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The semiconductor device structure includes a cap layer over the gate stack. The semiconductor device structure includes a protective layer over the cap layer, wherein a lower portion of the protective layer extends into the cap layer. The semiconductor device structure includes a contact structure passing through the protective layer and the cap layer.

Semiconductor device structure and method for forming the same

A semiconductor device includes an interface layer on a substrate, a gate dielectric layer on the interface layer, and a work function metal layer on the gate dielectric layer. An interface between the interface layer and the gate dielectric layer has a concentration of a dipole-inducing element. The semiconductor device also includes an oxygen blocking layer on the work function metal layer and a metal fill layer on the oxygen blocking layer.

Metal gates with layers for transistor threshold voltage tuning and methods of forming the same

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Hsinchu County, Taiwan

An-Hung Tai