Industrial Technology Research Institute

Vanguard International Semiconductor Corporation

An-Hung Lin

Chung-Ren Lao

Chien-Hsien Song

Chu-Feng Chen

Chin-Pin Chien

Wen-Shu Chiang

Pai-Chun Kuo

Hua-Chun Chiue

An interactive charging management system and a method thereof are provided. The present method includes following steps. A leakage event is detected when an electric vehicle is connected with a charging post. When the leakage event is not detected, the charging post is controlled to enter a charging state from a ready state, so as to continuously supply a charging power to the electric vehicle until the electric vehicle is completely charged. When the leakage event is detected, the charging post is controlled to stop supplying the charging power to the electric vehicle, and the electric vehicle is indicated to go offline, so as to perform a leakage test and determine whether to resume the ready state. When the charging post cannot resume the ready state, a service notice is issued to notify a curing unit to process.

Interactive charging management system and method thereof

An interactive charging management system and a method thereof are provided. The method is applicable to a plurality of electric vehicles, and which includes dynamically adjusting usable power information respectively provided by a plurality of charging posts respectively corresponding to and coupled to the electric vehicles according to demand power information of the respective electric vehicles; and making the charging posts non-uniformly provide a plurality of charging powers to the respective electric vehicles according to the adjusted usable power information.

A semiconductor device fabricating method is described. The semiconductor device fabricating method comprises forming an epitaxial layer on a substrate, wherein the epitaxial layer is the same conductive type as the substrate. A first doped region having the different conductive type from the epitaxial layer is formed in the epitaxial layer. An annealing process is performed to diffuse dopants in the first doped region. A second doped region and an adjacent third doped region are formed in the first doped region. The second doped region is a different conductive type from that of the first doped region, and the third doped region is the same conductive type as that of the first doped region. A gate structure is formed on the epitaxial layer covering a portion of the second and the third doped regions.

Semiconductor device and bipolar-CMOS-DMOS

Method for fabricating semiconductor device, method for fabricating bipolar-CMOS-DMOS

Growing community of inventors

Taipei County, Taiwan

An-Hung Lin