Taiwan Semiconductor Manufacturing Comp. Ltd.

An-Dih Yu

Chung-Ju Lee

Chi-Ming Yang

Ming-Han Lee

Shin-Yi Yang

Cheng-Hsiung Tsai

Chieh-Han Wu

Hwei-Jay Chu

Tzu-Hui Wei

A method for manufacturing a semiconductor structure includes forming a trench in a dielectric structure; forming a spacer layer on a lateral surface of the dielectric structure exposed by the trench; after forming the spacer layer, forming a first electrically conductive feature in the trench; removing at least portion of the dielectric structure to form a recess; forming an etch stop layer in the recess and over the first electrically conductive feature; and after forming the etch stop layer, depositing a dielectric layer in the recess and over the first electrically conductive feature.

Semiconductor structure having air gaps and method for manufacturing the same

The present disclosure provides chemical mechanical polishing (CMP) slurry, including an abrasive, a chelator, an oxidizing agent, and a surface modificator. The surface modificator is configured to modify a surface from hydrophobic to hydrophilic. The present disclosure also provides a method for reducing chemical mechanical polishing (CMP) surface defects. The method includes adding an additive into CMP slurry by at least 0.0001 wt %, wherein the additive modifies a surface to be polished from hydrophobic to hydrophilic.

Composition for chemical mechanical polishing and method for reducing chemical mechanical polishing surface defects

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Taipei, Taiwan

An-Dih Yu