Samsung Electronics Co., Ltd.

An-Chul Shin

Jeong-Ho Lee

Sang-il Jung

Jun-Seok Yang

Min-young Jung

Young-Hoon Park

Young-hoon Park

A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.

Method of fabricating metal interconnection and method of fabricating image sensor using the same

A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.

Method of fabricating image sensor

Growing community of inventors

Goyang-si, South Korea

An-Chul Shin