Macronix International Co., Ltd.

An-Chi Wei

Shih-Ping Hong

Ming-Tsung Wu

Han-Hui Hsu

Kuo-Liang Wei

Ming-Chung Liang

Ta-Hung Yang

Henry Chung

Shin-Yi Tsai

Ching-Hsiung Li

A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.

Patterning method

A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

Fabrication of metal film stacks having improved bottom critical dimension

A method of reducing pattern pitch is provided. A material layer, a hard mask layer and a patterned photoresist layer are sequentially formed over a substrate. Using the patterned photoresist layer as etching mask, the hard mask layer is etched. Due to the trenching effect, a residual hard mask layer remains in an exposed region exposed by the photoresist layer and micro-trenches are formed at the edges of the residual hard mask layer. Thereafter, using the residual hard mask layer as etching mask to pattern the material layer. Finally, the patterned photoresist layer and the hard mask layer are removed. In the invention, the trenching effect is utilized when etching the hard mask layer. A portion of the hard mask layer remains, and the micro-trenches are formed in the hard mask layer. After the micro-trenches are transferred to the material layer, the pattern pitch can be reduced.

Method of reducing pattern pitch in integrated circuits

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Hsinchu, Taiwan

An-Chi Wei