Taiwan Semiconductor Manufacturing Comp. Ltd.

Amy Wang

Jean Wang

Francis Ko

Henry Lo

Chun-Hsien Lin

Chih-Wei Lai

Chi-Chun Hsieh

Chen-Hua Douglas Yu

Kewei Zuo

Embodiments of the present invention relate to a method for a near non-adaptive virtual metrology for wafer processing control. In accordance with an embodiment of the present invention, a method for processing control comprises diagnosing a chamber of a processing tool that processes a wafer to identify a key chamber parameter, and controlling the chamber based on the key chamber parameter if the key chamber parameter can be controlled, or compensating a prediction model by changing to a secondary prediction model if the key chamber parameter cannot be sufficiently controlled.

Near non-adaptive virtual metrology and chamber control

A method to enable wafer result prediction from a batch processing tool, includes collecting manufacturing data from a batch of wafers processed in batch in the batch processing tool, to form a batch processing result; defining a degree of freedom of the batch processing result based on the manufacturing data; and performing an optimal curve fitting by trial and error for an optimal function model of the batch processing result based on the batch processing result.

Methodology to enable wafer result prediction of semiconductor wafer batch processing equipment

A method is disclosed for controlling the sheet resistance of copper trenches formed on semiconductor wafers. The method includes forming a plurality of copper-filled trenches on a wafer, measuring the sheet resistance of each of the plurality of copper-filled trenches, and comparing the measured sheet resistance values to a predetermined sheet resistance value. Photolithography steps performed on subsequent wafers are adjusted according to a difference between the measured sheet resistance values and the predetermined value. In one embodiment, this adjustment takes the form of adjusting a photolithographic extension exposure energy to thereby adjust the cross-section of the resulting trenches.

System and method for enhanced control of copper trench sheet resistance uniformity

A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.

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Taipei, Taiwan

Amy Wang