International Business Machines Corporation

Amy T Matts

John Ulrich Knickerbocker

Jon Alfred Casey

Sarah Huffsmith Knickerbocker

James N Humenik

Srinivasa S Reddy

Robert W Nufer

Mark A Takacs

John Acocella

Steven M Kandetzke

Renuka S Divakaruni

Richard A Bates

Arnold I Baise

Daniel P Kirby

Lovell B Wiggins

David R Clarke

Charles Hampton Perry

Lawrence D David

Ajay Prabhakar Giri

George Czornyj

Anthony Mastreani

Peter A Agostino

Salvatore J Scilla

Liang-Choo Hsia

Werner E Dunkel

Allen J Dam

Ray M Bryant

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

Low dielectric composite substrate

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

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Amy T Matts