Globalfoundries Inc.

Amy L Child

Andy C Wei

Zhenyu Hu

Qi Zhang

George Robert Mulfinger

Richard J Carter

Sruthi Muralidharan

Judson Robert Holt

Timothy James McArdle

Ryan W Sporer

Dina H Triyoso

A pFET includes a semiconductor-on-insulator (SOI) substrate; and a trench isolation within the SOI substrate, the trench isolation including a raised portion extending above an upper surface of the SOI substrate. A compressive channel silicon germanium (cSiGe) layer is over the SOI substrate. A strain retention member is positioned between at least a portion of the raised portion of the trench isolation and the compressive cSiGe layer. A gate and source/drain regions are positioned over the compressive cSiGe layer.

Strain retention semiconductor member for channel SiGe layer of pFET

Device structures for a FinFET and fabrication methods for making a device structure for a FinFET. A first layer containing a first dopant is formed on a first region of a substrate. A second layer containing a second dopant is formed on a second region of the substrate. A first plurality of fins are formed and are each located in a respective trench extending from the substrate through the first layer. A second plurality of fins are formed and are each located in a respective trench extending from the substrate through the second layer. The first dopant is transferred from the first layer to a first section in each of the first plurality of fins and the second dopant is transferred from the second layer to a first section in each of the second plurality of fins.

Punchthrough stop layers for fin-type field-effect transistors

Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

Epitaxial block layer for a fin field effect transistor device

Growing community of inventors

Wilton, NY, United States of America

Amy L Child