Advanced Micro Devices Corporation

North Carolina State University

Amro Awad

Sergey Blagodurov

Gabriel H Loh

David S Christie

Andrew Gregory Kegel

Yan Solihin

Kevin John McGrath

Arkaprava Basu

Mark Henry Oskin

Yipeng Wang

Kevin J Mcgrath

The described embodiments include a computing device with two or more translation lookaside buffers (TLB). During operation, the computing device updates an entry in the TLB based on a virtual address to physical address translation and metadata from a page table entry that were acquired during a page table walk. The computing device then computes, based on a lease length expression, a lease length for the entry in the TLB. Next, the computing device sets, for the entry in the TLB, a lease value to the lease length, wherein the lease value represents a time until a lease for the entry in the TLB expires, wherein the entry in the TLB is invalid when the associated lease has expired. The computing device then uses the lease value to control operations that are allowed to be performed using information from the entry in the TLB.

Adaptive extension of leases for entries in a translation lookaside buffer

A non-volatile memory device having at least one non-volatile flash memory formatted with physical addresses to read and write data that is organized into blocks of data, wherein the blocks of data are organized into pages of data, and wherein the pages of data are organized into cells of data. The non-volatile memory device includes a non-volatile memory controller to direct read and write requests to the non-volatile flash memory for the storage and retrieval of data. The non-volatile memory controller includes a flash translation layer to correlate read and write requests for data having a logical address between the reading and writing the data to physical address location of the non-volatile flash memory. The flash translation layer, when writing to a physical address location, chooses between a wear-leveling circuit and a wear-limiting circuit to select the physical address location.

Wear-limiting non-volatile memory

Systems and methods for modeling memory access behavior and memory traffic timing behavior are disclosed. According to an aspect, a method includes receiving data indicative of memory access behavior resulting from instructions executed on a processor. The method also includes determining a statistical profile of the memory access behavior, the profile including tuple statistics of memory access behavior. Further, the method includes generating a clone of the executed instructions based on the statistical profile for use in simulating the memory access behavior.

Systems and methods for modeling memory access behavior and memory traffic timing behavior

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Raleigh, NC, United States of America

Amro Awad