Micron Technology Incorporated

Amritesh Rai

Yongjun Jeff Hu

Jordan D Greenlee

Matthew J King

Daniel Billingsley

Sidhartha Gupta

Kyle A Ritter

Tom George

A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, each of the tiers individually comprising a conductive structure and an insulative structure, strings of memory cells vertically extending through the stack structure, the strings of memory cells comprising a channel material vertically extending through the stack structure, and another stack structure vertically overlying the stack structure and comprising other tiers of alternating levels of other conductive structures and other insulative structures, the other conductive structures exhibiting a conductivity greater than a conductivity of the conductive structures of the stack structure. Related memory devices, electronic systems, and methods are also described.

Microelectronic devices including conductive structures

Microelectronic devices including conductive structures, and related memory devices, electronic systems, and methods

Growing community of inventors

Boise, ID, United States of America

Amritesh Rai