Inpria Corporation

Amrit K Narasimhan

Kai Jiang

Robert E Jilek

Jeremy T Anderson

Stephen T Meyers

Brian J Cardineau

Michael K Kocsis

Lauren B McQuade

Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of δP+δH, and a second solvent component of the developer has a higher value of δP+δH. Corresponding solvent compositions are described.

Organometallic photoresist developer compositions and processing methods

As described herein, photosensitive composition comprises RSnL, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C≡CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

Organotin patterning materials with ligands having silicon/germanium; precursor compositions; and synthesis methods

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Corvallis, OR, United States of America

Amrit K Narasimhan