Apple Inc.

Amr O Haggag

Aly Ismail

Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.

Transistor aging reversal using hot carrier injection

Embodiments relate to a circuit implementation for extending the bandwidth of an amplifier. The extended bandwidth amplifier includes an amplifier coupled between an input node and an output node of the extended bandwidth amplifier. The amplifier has an input capacitance and an output capacitance. The extended bandwidth amplifier additionally includes a first digitally-trimmable negative-capacitance capacitor coupled between the input node of the extended bandwidth amplifier and a power supply terminal. The digitally-trimmable negative-capacitance capacitor includes a first branch, a second branch, and a controller. The first branch includes a first capacitor having a first negative capacitance, and a first switch. The second branch includes a second capacitor having a second negative capacitance, and a second switch. The controller is configured to turn on the first switch and the second switch based on the input capacitance of the amplifier.

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Pleasanton, CA, United States of America

Amr O Haggag