Zetta Research and Development LLC - Aqt Series

Novellus Systems Incorporated

Kla-tencor Technologies Corporation

Amith Kumar Murali

Mariana Rodica Munteanu

Brian Josef Bartholomeusz

Vardaan Chawla

David W Shortt

Daniel Ivanov Kavaldjiev

John Giles Langan

Brian L Haas

Kurt Lindsay Haller

Alexander Belyaev

Aleksey Petrenko

William R Entley

Mike D Kirk

Kathleen Bennett

Kirk Hayes

In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.

Closed-space annealing process for production of CIGS thin-films

In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.

Closed-space annealing of chalcogenide thin-films with volatile species

In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Reverse stack structures for thin-film photovoltaic cells

Methods of determining the endpoint of cleaning residues from the internal surfaces of a chemical vapor deposition chamber are described. The methods are especially useful for determining when organic-based residues deposited from an ultra low-k film precursor deposition are removed from the chamber. The methods involve cleaning the chamber with a plasma comprising fluorine and oxygen while monitoring the intensity of the optical emission lines of one or more atomic or molecular species that correlate to the removal of the organic-based residues. Techniques and apparatuses for monitoring different appropriate emission lines are described. Methods of the invention can be used to prevent particle contamination during CVD operations following ultra low-k film precursor depositions and improve wafer throughput in manufacturing environments.

Method for endpointing CVD chamber cleans following ultra low-k film treatments

Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.

Computer-implemented methods and systems for determining a configuration for a light scattering inspection system

Growing community of inventors

Fremont, CA, United States of America

Amith Kumar Murali