Tagore Technology, Inc.

Amitava Das

Manish N Shah

Sudhir Gouni

A HEMT cell includes two or more gallium nitride ('GaN') high-electron-mobility transistor ('HEMT') devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (&#x201c;2DEG&#x201d;) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

High performance radio frequency switch

An adjustable threshold power limiter circuit. A number of switching elements are included with at least a first and second switching element that each has a first terminal, a second terminal, and an insulated gate terminal. The switching elements forming a conductive path between its first and second terminals based on a voltage between its insulated gate terminal and one of its first or terminal exceeding a threshold. A conductive path is present with a series connection of the switching elements between a signal input and a reference potential. A controller is included and is electrically coupled to each insulated gate terminal of each switching element to independently provide to each insulated gate terminal either an on voltage or an off voltage.

High speed programmable threshold gallium nitride power limiter

A HEMT cell includes two or more gallium nitride ('GaN') high-electron-mobility transistor ('HEMT') devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (&#x201c;2DEG&#x201d;) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

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Barrington Hills, IL, United States of America

Amitava Das