Indian Institute of Technology Bombay

Amita

Apurba Laha

Krista Roluahpuia Khiangte

Udayan Ganguly

Suddhasatta Mahapatra

Embodiments herein disclose a method providing deposition of Gadolinium Oxide (GdO) on a semiconductor substrate. The method comprises of selecting, in an RF-sputter system, a predefined substrate and depositing, in an Ar-plasma struck, the GdO, over the predefined substrate to obtain a layer of the GdOover the predefined substrate. The GdOis grown epitaxially over the predefined substrate. The method further provides performing, annealing, of the layer of the GdOover the predefined substrate at a predefined temperature for a predefined time and obtaining, a layer of the GdO, over the predefined substrate. Embodiment also provides a method for fabricating Semiconductor on Insulator Substrate (SIS).

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