Rockley Photonics Limited

Celestial Ai Inc.

Amit Singh Nagra

Hooman Abediasl

Damiana Lerose

Pradeep Srinivasan

Guomin Yu

Haydn Frederick Jones

Andrew George Rickman

Aaron John Zilkie

Thomas Pierre Schrans

Nathan Farrington

Andrea Trita

David Arlo Nelson

Jeffrey B Driscoll

Joyce Kai See Poon

Dong Yoon Oh

Zheng Yong

John Drake

Henri Nykänen

Sanna Leena Mäkelä

Aaron L Birkbeck

Evie Kho

Chia-Te Chou

Yi Zhang

Cyriel Johan Agnes Minkenberg

Benjamin Ver Steeg

Albert Benzoni

William Vis

An optoelectronic device. The device comprising: an input waveguide, which receives an optical signal; a multistage photodiode detector, comprising a plurality of photodiode elements connected in series, one of the photodiode elements of the plurality of photodiode elements being connected to the input waveguide and configured to receive the optical signal therefrom; and a first electrode and a second electrode, wherein the first electrode is connected to a first contact of each of the plurality of photodiode elements, and the second electrode is connected to a second contact of each of the plurality of photodiode elements.

Optoelectronic device

A system and method for positioning a sensor on a subject. In some embodiments, the system includes an instrument holder, the instrument holder being configured to be secured to a subject, and to hold an instrument temporarily.

System and method for positioning a sensor on a subject

An optoelectronic device. The device comprising: a silicon-on-insulator, SOI, wafer, the SOI wafer including a cavity and an input waveguide, the input waveguide being optically coupled into the cavity; and a mirror, located within the cavity and bonded to a bed thereof, the mirror including a reflector configured to reflect light received from the input waveguide in the SOI wafer.

Optoelectronic device and method of manufacture thereof

A mirror and method of fabricating the mirror, the method comprising:

Waveguide mirror and method of fabricating a waveguide mirror

A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.

Waveguide modulator structures

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

Waveguide optoelectronic device

An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

Optical modulators

A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.

PN-junction phase modulator in a large silicon waveguide platform

A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 &#x3bc;m; and wherein the separation between the second sidewall of the ridge and the second slab interface is no more than 10 &#x3bc;m.

Waveguide device and method of doping a waveguide device

A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.

Reconfigurable spectroscopy system

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and applying a metal coating to the underside surface.

An L-dimensional optoelectronic switch for transferring an optical signal from an input device to an output device, the optoelectronic switch includes: a plurality of leaf switches, each having a radix R, and arranged in an L-dimensional array, in which each dimension i has a respective size R(i=1, 2, . . . , L), each leaf switch having an associated L-tuple of co-ordinates (x, . . . , x) giving its location with respect to each of the L dimensions; wherein each leaf switch is a member of L sub-arrays, each of the L sub-arrays associated with a different one of the L dimensions, and including: a plurality of Rleaf switches, whose co-ordinates differ only in respect of the idimension, each leaf switch having C client ports for connecting to an input device or an output device, and F fabric ports for connecting to spine switches; a plurality of Sspine switches, each having R fabric ports for connecting to the fabric ports of the leaf switches, and wherein, in a given sub-array each leaf switch in the sub-array is connected to each spine switch via an optical active switch.

Growing community of inventors

Altadena, CA, United States of America

Amit Singh Nagra