Kla Tencor Corporation

Kla Corporation

Amit Shaked

Eran Amit

Liran Yerushalmi

Nuriel Amir

Amnon Manassen

Vladimir Levinski

Daniel Kandel

Dror Alumot

Andrew V Hill

Barak Bringoltz

Avi Abramov

Tal Marciano

Valery Garmider

Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moir&#xe9; patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moir&#xe9; patterns.

Device-like metrology targets

A tunable filter may include an input focusing optic, an output focusing optic, a linearly-varying filter located at a back focal plane of the input focusing optic and a front focal plane of the output focusing optic, an input angular scanning component located at a front focal plane of the input focusing optic configured to receive an input beam, and an output angular scanning component located at a back focal plane of the output focusing optic. The input focusing optic may receive the input beam from the input angular scanning component and direct the input beam to the linearly-varying filter, where a position of the input beam on the linearly-varying filter is selectable based on an angle of the input angular scanning component. The output focusing optic may receive a filtered beam from the linearly-varying filter and direct the filtered beam to the output angular scanning component.

Broadband illumination tuning

An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

Device metrology targets and methods

Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

Metrology targets with supplementary structures in an intermediate layer

Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

Estimating and eliminating inter-cell process variation inaccuracy

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Karkur, Israel

Amit Shaked