Applied Materials, Inc.

Amit Chatterjee

Abhijit Basu Mallick

Nitin K Ingle

Srinivas D Nemani

Mehul B Naik

Robert Jan Visser

Pramit Manna

Timothy Weidman

He Ren

Abhishek Dube

Jingmei Liang

Sukti Chatterjee

Xiaolin C Chen

Geetika Bajaj

Paul L Deaton

Timothy B Michaelson

Tapash Chakraborty

Kiran V Thadani

Brian Saxton Underwood

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Low temperature silicon nitride films using remote plasma CVD technology

Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.

Ultra-thin structure to protect copper and method of preparation

Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.

Flowable carbon film by FCVD hardware using remote plasma PECVD

Methods for depositing metal-polymer composite materials atop a substrate are provided herein. In some embodiments, a method of depositing a metal-polymer composite material atop a substrate disposed in a hot wire chemical vapor deposition (HWCVD) chamber may include flowing a current through a plurality of filaments disposed in the HWCVD chamber, the filaments comprising a metal to be deposited atop a substrate; providing a process gas comprising an initiator and a monomer to the HWCVD chamber; and depositing a metal-polymer composite material on the substrate using species decomposed from the process gas and metal atoms ejected from the plurality of filaments.

Methods for depositing metal-polymer composite materials atop a substrate

A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N), argon, hydrogen (H) and/or oxygen (O). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200&#xb0; C. when a local plasma is excited using relatively low power.

Low cost flowable dielectric films

Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

Radiation patternable CVD film

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Cupertino, CA, United States of America

Amit Chatterjee