Micron Technology Incorporated

Amirhasan Nourbakhsh

Sanh D Tang

John K Zahurak

Hong Li

Silvia Borsari

Durai Vishak Nirmal Ramaswamy

Yongjun Jeff Hu

Christopher W Petz

Luca Fumagalli

Kentaro Ishii

Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies, and methods of forming integrated assemblies

A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

Devices, methods of forming a device, and memory devices

Methods of forming an apparatus, and related apparatuses and electronic systems

Methods of forming integrated assemblies

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Boise, ID, United States of America

Amirhasan Nourbakhsh