Sandisk Il Ltd.

M-Systems Flash Disk Pioneers, Ltd.

Msystems Ltd.

Amir Ronen

Meir Avraham

Menahem Lasser

A plurality of memory cells are managed by obtaining values of one or more environmental parameters of the cells and adjusting values of one or more reference voltages of the cells accordingly. Alternatively, a statistic of at least some of the cells, relative to a single reference parameter that corresponds to a control parameter of the cells, is measured, and the value of the reference voltage is adjusted accordingly. Examples of environmental parameters include program-erase cycle count, data retention time and temperature. Examples of reference voltages include read reference voltages and program verify reference voltages. Examples of statistics include the fraction of cells whose threshold voltages exceed initial lower bounds or initial medians.

Drift compensation in a flash memory

An integrated circuit (IC) die includes two bonding pads, that share a common logical function, such as signal input or signal output, separated by the width of the die, and preferably on opposite sides of the die. System-in-package devices are produced by steps including directly electrically connecting one or the other bonding pad to bonding pads of other, functionally different IC dies, with the bonding pads of the other IC dies, to which are connected bonding pads of common logical function of the IC dies of the present invention, being functionally identical but geometrically different. Multchip package devices are produced by stacking the IC dies of the present invention with other IC dies and directly electrically connecting one or the other bonding pad to different bonding pads of the other IC dies.

Integrated circuit die with logically equivalent bonding pads

An integrated circuit (IC) die includes two bonding pads, that share a common logical function, such as signal input or signal output, separated by the width of the die, and preferably on opposite sides of the die. System-in-package devices are produced by steps including directly electrically connecting one or the other bonding pad to bonding pads of other, functionally different IC dies, with the bonding pads of the other IC dies, to which are connected bonding pads of common logical function of the IC dies of the present invention, being functionally identical but geometrically different. Multichip package devices are produced by stacking the IC dies of the present invention with other IC dies and directly electrically connecting one or the other bonding pad to different bonding pads of the other IC dies.

Methods of managing memory devices, and devices so managed. A value of a parameter, that is used to program one or more memory cells, is adapted to a monitored condition of the cell(s). Either the number of bits per cell is held fixed or the monitored condition is an intrinsic condition of the cell(s). The initial value of the parameter is optimized for those specific cells, relative to a pre-selected criterion, by programming the cell(s) in accordance with candidate values of the parameter.

Method and system for optimizing reliability and performance of programming data in non-volatile memory devices

Data are stored in one or more cells of a non-volatile memory, and are refreshed according to a predetermined condition. The data are refreshed either in-place or out-of-place. The condition may be related to the age of the data. Alternatively, the data are refreshed periodically, or when the system that includes the memory boots or dismounts, or according to the type of the data.

Refreshing data stored in a flash memory

A datum is stored in a memory by placing a memory cell in a first state that is indicative of the datum, and later placing the same or a different cell in a second state that is indicative of the same datum. If a different cell is placed in the second state, both cells are programmed to store the same number of bits, and then preferably the first cell is erased. Preferably, the first cell is placed in the first state by the application thereto of a first train of voltage pulses until the cell's threshold voltage exceeds a first reference voltage, and the first or second cell is placed in the second state by the application thereto of a second train of voltage pulses until the cell's threshold voltage exceeds a second reference voltage.

Two-phase programming of a flash memory

A method and system for archiving data. The data are classified according to their desired lifetime and then archived in a memory using a storage method whose reliability is in accordance with the desired lifetime. For example, when storing data in the cells of an EPROM, short-term data could be archived using larger programming voltage pulse increments than for long-term data, using a lower target threshold voltage than for long-term data, using wider programming voltage pulses than for long-term data, using higher starting programming voltages than for long-term data, using fewer programming voltage pulses than for long term data, using lower maximum programming voltages than for long term data, or using more levels per cell than for long-term data.

Growing community of inventors

Hod Hasharon, Israel

Amir Ronen