Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Amir Rahafrooz

Diego Emilio Serrano

Ijaz Hussain Jafri

Thomas Kieran Nunan

Ronald Joseph Lipka

Mohammad Maymandi Nejad

Chihchuan Che

Ryan P Hennessy

Duane Younkin

Ijaz Jafri

A mechanical resonator includes two identical plates, and a decoupling structure comprising at least two first connectors, each first connector connecting the decoupling structure to a respective one of the two identical plates, and an anchor disposed at a center of the decoupling structure. Each of the two identical plates may be a square plate adapted to resonate in Lamé-mode. Further, each of the two identical plates may comprise a plurality of square plates, each square plate disposed next to one another. The decoupling structure further comprises a first ring connected to each of the two identical plates via a respective one of the at least two first connectors. The decoupling structure may further comprise a second ring connected to an inside of the first ring via at least two second connectors, wherein the anchor is disposed at a center of the second ring.

Single anchor resonators

Mechanical resonator includes two identical proof-masses, at least one connecting beam connecting the two identical proof-masses adapted to oscillate in a same phase in a direction perpendicular to a direction of a connecting beam, and at least one anchor attached to a middle of the at least one connecting beam. Two identical proof-masses are resonant plates, and the at least anchor is anchored to a substrate. The at least anchor may comprise two anchors attached to a middle of the at least one connecting beam in opposite directions. Also, the at least one connecting beam comprises an outer ring at a middle thereof, and the at least anchor is disposed at a center of the outer ring and is connected to the outer ring via two sub-connecting beams. The outer ring may be in a rectangular ring shape. Alternatively, the outer ring may be in a circular ring shape.

Dual proof-mass resonators with low support loss

Systems and methods disclosed herein include a correction circuit. The correction circuit may include frequency division circuitry that is configured to receive and condition a reference signal. The correction circuit may include drive circuitry that is configured to receive the reference signal. The correction circuit may include a first resonator that is configured to receive the reference signal. The correction circuit may include sense circuitry that is configured to receive the reference signal from the first resonator. The correction circuit may include phase detector circuitry that is configured to generate at least one output signal based on receipt of a plurality of input signals from the drive circuitry and the sense circuitry. The correction circuit may include a proportional integral derivative controller that is configured to generate a temperature correction signal to correct frequency error in an oscillator based on receipt of the at least one output signal.

Systems and methods for real-time frequency shift detection via a nested-MEMS architecture

A sensing device includes a resonant member that is movable in a first mode and a second mode, and an electrode. The resonant member has a capacitive surface portion that faces and is capacitively coupled to a capacitive surface portion of the electrode. Displacement for each point along the capacitive surface portion of the resonant member in the first mode is substantially tangent to the point.

Sensing device

A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.

Semiconductor device and method of manufacturing thereof

A MEMS BAW vibratory planar gyroscope having an in-plane electrode configuration for mode-alignment by utilizing alignment electrodes that have a height less than a full height of the gyroscope resonant body. Such alignment electrodes apply a force component that affects modes with both in-plane and out-of-plane movements. The gyroscope includes a resonant body having a height and a perimeter surface and electrodes disposed adjacent the exterior perimeter surface of the resonant body. At least one of the electrodes is an alignment electrode and has a height less than the height of the resonant body.

Growing community of inventors

Shaker Heights, OH, United States of America

Amir Rahafrooz