Broadcom Corporation

Amir Ibrahim

John S Walley

Evan S McCarthy

Jared Welz

Sunil Kanekal

Jeon Hyun-Gyu

Brima Babatunde Ibrahim

Henrik Tholstrup Jensen

Shahla Khorram

Hea Joung Kim

Siukai Mak

Seema Butala Anand

Thomas Francis Baker

Aminghasem Safarian

Norbert Grunert

Hyun-Gyu Jeon

Disclosed are various embodiments involving correction of signals generated by a crystal oscillator. An age of an integrated circuit or a time of use of the integrated circuit may be determined. A signal generated from a crystal of the integrated circuit may be modified based at least in part on the determined age of the integrated circuit or the determined time of use of the integrated circuit.

Method and system for signal generation via a temperature sensing crystal integrated circuit

Techniques and devices are disclosed to provide multi-stage gain control in circuits or devices having two or more stages of signal amplification. A circuit with multi-stage gain control can include amplification stages coupled to receive an input signal and to produce an amplified output signal. Each amplification stage includes an amplifier that is adjustable in gain and a signal detector that is coupled to measure an output signal of the amplifier and to produce a detector signal indicative of a signal strength of the output signal of the amplifier. A gain control circuit is coupled to receive detector signals from the signal detectors in the amplification stages, respectively, and to control gains of the amplifiers of the amplification stages based on respective received detector signals, respectively.

Multi-stage gain control in receivers and other circuits

Aspects of the invention may comprise an integrated circuit comprising a memory, a temperature sensor, a crystal, and a communication module. Data stored in the memory may indicate a frequency of the crystal as a function of temperature and/or time. The memory may be writable via the communication module. Data stored in the memory of the integrated circuit may be updated based on an age and/or time of use of the integrated circuit. The time of use may be one or both of: how long the crystal has been oscillating since its most-recent start up, and how long the crystal has been in use over its lifetime. An electronic device may calculate a frequency of an oscillating signal output by the crystal based on a temperature indication from the temperature sensor and data read from the memory of the integrated circuit.

In a radio comprising a transmitter and a receiver, transmission and reception of signals may be controlled based on received signal strength measurements from a signal strength indicator module and transmitted signal strength measurements from the signal strength indicator module. For the transmitted signal strength measurements, the shared signal strength indicator module may measure signal strength of a signal output by a power amplifier. For the received signal strength measurements, the shared signal strength indicator module may measure signal strength of a received signal. A capacitance coupled to an output of the power amplifier may be configured based on a frequency of the signal output by the power amplifier. A gain of the power amplifier may be controlled based on the transmitted signal strength measurements. For the transmitted signal strength measurements, an analog-to-digital converter may process the signal output by the power amplifier.

Method and system for signal strength measurement

Aspects of a method and system for signal generation via a temperature sensing crystal integrated circuit are provided. In this regard, a temperature sensing crystal integrated circuit (TSCIC) comprising a memory and a crystal or crystal oscillator may generate a signal indicative of a measured temperature. The generated signal and data stored in the memory may be utilized to configure one or more circuits communicatively coupled to the TSCIC. The data stored in the memory may characterize behavior of the TSCIC as a function of temperature and/or time. The data characterizing the behavior of the TSCIC may indicate variations in frequency of the crystal or crystal oscillator as a function of temperature and/or time. The data characterizing the behavior of the TSCIC may comprise one or both of a frequency value and a frequency correction value.

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Newport Beach, CA, United States of America

Amir Ibrahim