Asml Netherlands B.v.

Amir Bin Ismail

Marc Hauptmann

Rizvi Rahman

Everhardus Cornelis Mos

Kaustuve Bhattacharyya

Roy Werkman

Ralph Brinkhof

Emil Peter Schmitt-Weaver

Cornelis Johannes Henricus Lambregts

Ekaterina Mikhailovna Viatkina

Paul Derwin

Allwyn Boustheen

Raheleh Pishkari

Jiapeng Li

A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.

Method for controlling a semiconductor manufacturing process

A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.

Method for generating a control scheme and device manufacturing method

Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

Mark position determination method

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Eindhoven, Netherlands

Amir Bin Ismail