Oxford University Innovation Limited

Amir Abbas Hagighirad

Henry James Snaith

Feliciano Giustino

George Volonakis

Marina Filip

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B]; (iii) one or more trications [B]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B] selected from Cu, Agand Au; (iii) one or more trications [B]; and (iv) one or more halide anions [X].

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Amir Abbas Hagighirad