Semiconductor Energy Laboratory Co., Ltd.

Ami Sato

Shunpei Yamazaki

Kei Takahashi

Koji Kusunoki

Kazunori Watanabe

Yukinori Shima

Kouhei Toyotaka

Susumu Kawashima

Masataka Nakada

Masahiro Katayama

A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween. The pixel includes a first connection portion where the pixel electrode is electrically connected to the transistor and a second connection portion where the first conductive layer is electrically connected to the common electrode. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.

Display device, display module, and electronic device

A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.

Semiconductor device comprising first metal oxide film and second metal oxide film

Semiconductor device comprising oxide semiconductor film

Growing community of inventors

Tochigi, Japan

Ami Sato