Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Aledia

Centre National De La Recherche Scientifique

Thales

Université Grenoble Alpes

Commissariat a L'energie Atomique Et Aux Energies

Amélie Dussaigne

Ivan-Christophe Robin

Carole Pernel

Philippe Gilet

Patrick Le Maitre

Bérangère Hyot

Adrien Gasse

Francois Martin

Guy Feuillet

Joël Eymery

Pierre Ferret

Benjamin Damilano

Bruno-Jules Daudin

Emilie Pougeoise

Christophe Durand

Anne-Laure Bavencove

Alain Million

Ludovic Dupre

Stéphanie Gaugiran

Armelle Even

Philipe Gilet

Damien Salomon

François Martin

François Levy

Stéphane Vezian

Timotee Journot

Fabian Rol

A method for manufacturing a native emission matrix, comprising the following steps: a) providing a base structure comprising a substrate, a layer of GaN, a layer of doped In(x)GaN and an epitaxial regrowth layer of nid In(x)GaN, b) structuring first and second mesas in the base structure, the first mesa comprising a part of the layer of GaN, the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, the second mesa comprising a part of the layer of doped In(x)GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN, c) electrochemically porosifying the second mesa, d) producing stacks on the mesas to form LED structures emitting at various wavelengths.

Method for manufacturing a native emission matrix having doped and porosified In(x)GaN

A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps: a) providing a first stack comprising a GaN or InGaN layer to be porosified and a barrier layer, b) transferring the GaN or InGaN layer to be porosified and the barrier layer to a porosification support, in such a way as to form a second stack, c) forming a mask on the GaN or InGaN layer to be porosified, d) porosifying the GaN or InGaN layer through the mask, e) transferring the GaN or InGaN porosified layer and the barrier layer to a support of interest, f) forming an InGaN layer by epitaxy on the barrier layer, whereby a relaxed epitaxial InGaN layer is obtained.

Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure

A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode () to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.

Process for manufacturing a relaxed GaN/InGaN structure

A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.

Method for manufacturing a substrate comprising a relaxed InGaN layer

A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.

Method for producing a patterned layer of material

A light-emitting device including first, second, and third pixels, wherein: the first pixel includes a two-dimensional light-emitting cell including a vertical stack of a first semiconductor layer of a first conductivity type, of an active layer, and of a second semiconductor layer of the second conductivity type; each of the second and third pixels includes a three-dimensional light-emitting cell including a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure including a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and the nanostructures of the second and third pixels have different dimensions and/or a different spacing.

Multi-color light-emitting device and method of manufacturing such a device

The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (T) no lower than 1050&#xb0; C. and to a stream of ammonia.

Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene

The invention relates to a method of manufacturing an optoelectronic device () produced on the basis of GaN, comprising an emission structure () configured to emit a first light radiation at the first wavelength (&#x3bb;),

Method of manufacturing an optoelectronic device by transferring a conversion structure onto an emission structure

An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.

Optoelectronic device with three-dimensional semiconductor elements

A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a portion of the active area being sandwiched between the electrode and the lateral walls of the semiconductor element. The active area includes an alternation of first semiconductor layers mainly including a first element and a second element and of second semiconductor layers mainly including the first element and the second element and further including a third element. In at least three of the layers, the mass concentration of the third element increases in the portion of the active layer as the distance to the substrate decreases.

Multiple quantum well light-emitting device

The invention relates to a method for manufacturing an optoelectronic device () including wire-like, conical, or frustoconical semiconductor elements () predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (), the side surfaces () of which are covered with a shell () including at least one active region (), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.

Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said device

A light emitting diode including an n-doped InGaN layer and a p-doped InGaN layer, and an active area arranged between the InGaN layer and the InGaN layer including: a first InN layer with a thickness e; a second InN layer with a thickness e; a separating layer arranged between the InN layers and including InGaN and a thickness &#x3c;3 nm; an InGaN layer arranged between the InGaN layer and the first InN layer; an InGaN layer arranged between the InGaN layer and the second InN layer; wherein the indium compositions Xn, Xp, Xb, X1 and X2 are between 0 and about 0.25, and wherein the thicknesses eand eare such that e&#x3c;e.

Light emitting diode of which an active area comprises layers of inn

An optoelectronic device comprises microwires or nanowires, each of which comprises an alternation of passivated portions and of active portions, the active portions being surrounded with an active layer, where the active layers do not extend on the passivated portions.

Optoelectronic device comprising microwires or nanowires

A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgN, and forming at least one semiconducting micro- or nano-wire on the buffer layer.

Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure

An optoelectric device including microwires or nanowires on a support, each microwire or nanowire including at least one portion mainly containing a III-V compound in contact with the support, wherein the III-V compound is based on a first group-V element and on a second group-III element, wherein a surface of the support includes first areas of a first material promoting the growth of the III-V compound according to the polarity of the first element distributed in a second area of a second material promoting the growth of the compound according to the polarity of the second element, the microwires or nanowires being located on the first areas.

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Bizonnes, France

Amélie Dussaigne