Sk Hynix Memory Solutions Inc.

Sandisk Technologies Inc.

Skhynix Inc.

Ameen Aslam

Jason Bellorado

Lingqi Zeng

Xiangyu Tang

Frederick K H Lee

Arunkumar Subramanian

Sergey Anatolievich Gorobets

Steven Theodore Sprouse

Alan David Bennett

Zheng Wu

William S Wu

Derrick Preston Chu

Nandan Sridhar

Krishna Dhulipala

A first bit position of a cell in solid state storage is read where a sorting bit is obtained using the read of the first bit position. A second bit position of the cell is read for a first time, including by setting a first read threshold associated with the second bit position to a first value and setting a second read threshold associated with the second bit position to a second value. The second bit position of the cell is read for a second time, including by setting the first read threshold to a third value and setting the second read threshold to a fourth value. A new value for the first read threshold and for the second read threshold is generated using the sorting bit, the first read, and the second read.

Generating read thresholds using gradient descent and without side information

A system and method for clearing data from a cache in a storage device is disclosed. The method may include analyzing the cache for the least recently fragmented logical group, and evicting the entries from the least recently fragmented logical group. Or, the method may also include analyzing compaction history and selecting entries for eviction based on the analysis of the compaction history. The method may also include scheduling of different eviction mechanisms during various operations of the storage device. The system may include a cache storage, a main storage and a controller configured to evict entries associated with a least recently fragmented logical group, configured to evict entries based on analysis of compaction history, or configured to schedule different eviction mechanisms during various operations of the storage device.

Method and system for binary cache cleanup

An instruction to read at least a portion of a superblock is received where the superblock is stored on at least a first solid state storage die. It is determined if adjusted threshold information, associated with the first solid state storage die and the superblock, is stored. If it is determined that adjusted threshold information is not stored, then an adjusted threshold is determined and a read is performed on the first solid state storage die using the determined adjusted threshold. If it is determined that adjusted threshold information is stored, then a read is performed on the first solid state storage die using the stored adjusted threshold information.

Threshold carrying for solid state storage

A method and system for partial page programming in a storage device is disclosed. An amount of data for partial page programming is determined. The amount may include host data (such as host data in a host command sent from a host device) and/or binary cache index data. The write step, used for partial page programming, is dynamically set based on the determined amount of data for partial page programming. In this way, the write step for partial page programming is dynamic rather than fixed. Further, dynamically setting the write step may reduce the number of programming steps for storing the host data in the host command and may reduce padding when partial page programming, thereby leaving less invalid data inside a block.

Command aware partial page programming

A plurality of write data is received and combined to obtain backup write data. The plurality of write data is stored in storage. On a storage controller, the plurality of write data is released without waiting for a confirmation associated with writing the plurality of write data to the storage. The backup write data is stored.

Recovering from a program failure by combining write data

A next read threshold is determined by determining a first number of solid state storage cells having a stored voltage which falls into a first voltage range and determining a second number of solid state storage cells having a stored voltage which falls into a second voltage range. A gradient is determine by taking a difference between the first number of solid state storage cells and the second number of solid state storage cells. The next read threshold is determined based at least in part on the gradient.

Growing community of inventors

Santa Clara, CA, United States of America

Ameen Aslam