Skyworks Solutions, Inc.

Other

Ambarish Roy

Guillaume Alexandre Blin

Yu Zhu

Nuttapong Srirattana

Stephen Richard Moreschi

Seungwoo Jung

David Scott Whitefield

Eric Marsan

Peter Harris Robert Popplewell

Christophe Masse

Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a radio-frequency switching device can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the radio-frequency switching device.

Devices related to switch body connections to achieve soft breakdown

Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.

Devices and methods for layout-dependent voltage handling improvement in switch stacks

Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a method of implementing a radio-frequency switching device can include providing an assembly of source, gate, and drain implemented on an active region; providing a first body contact implemented at a first end of the assembly; and providing a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the radio-frequency switching device.

Methods related to switch body connections to achieve soft breakdown

Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.

Switch body connections to achieve soft breakdown

A radio-frequency module includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling path.

Switch resistor networks

A switch fabrication method can include forming a plurality of elements, and connecting the elements in series between a first terminal and a second terminal, such that the elements include a first end element connected to the first terminal and a second end element connected to the second terminal. Each element can have a parameter such that the elements have a distribution of parameter values that decreases from the first end element for at least half of the elements to a minimum parameter value corresponding to an element between the first end element and the second end element. The minimum parameter value can be less than the parameter value of the second end element, and the parameter value of the first end element can be greater than or equal to the parameter value of the second end element.

Radio-frequency switch having stack of non-uniform elements

Cascode amplifier having feedback circuits. In some embodiments, an amplifier can include a first transistor and a second transistor arranged in a cascode configuration, with each transistor having a gate. The amplifier can further include a first feedback circuit implemented between an output of the second transistor and the gate of the second transistor. The amplifier can further include a second feedback circuit implemented between the output of the second transistor and the gate of the first transistor.

Cascode amplifier having feedback circuits

A radio-frequency switch includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling path.

Manifolded gate resistance network

Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. Some implementations include a radio frequency switch arrangement having a ground plane, a stack and a first solder bump. The stack is arranged in relation to the ground plane, and includes switching elements coupled in series with one another, and a first end of the stack includes a respective terminal of a first one of the plurality of switching elements. The first solder bump is coupled to the respective terminal of the first one of the plurality of switching elements such that at least a portion of the first solder bump overlaps with one or more of the plurality of switching elements, an overlap dimension set in relation to a first threshold value in order to set a respective contribution to a parasitic capacitance of the radio frequency switch arrangement.

Stacked radio frequency devices

A process for fabricating a semiconductor die involves providing a semiconductor substrate, forming a first field-effect transistor on the semiconductor substrate, the first field-effect transistor having a source, a drain, a gate, and a body, forming a coupling path that couples the body of the first field-effect transistor to the gate of the first field-effect transistor, the coupling path including a diode, and forming an adjustable impedance network coupled between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.

Linearity in radio-frequency devices using body impedance control

Stack device having voltage compensation. In some embodiments, a switching device can include switching elements connected in series between a first terminal and a second terminal, with a first end switching element being connected to the first terminal and a second end switching element being connected to the second terminal. Each switching element can have a parameter such that the switching elements have a distribution of parameter values that decreases from the first end switching element for at least half of the switching elements to a minimum parameter value corresponding to a switching element between the first end switching element and the second end switching element. The minimum parameter value can be less than the parameter value of the second end switching element, and the parameter value of the first end switching element can be greater than or equal to the parameter value of the second end switching element.

Stack device having voltage compensation

A semiconductor die comprises a first active device, at least one of a second active device and a passive component, and electromagnetic shielding configured to at least partially electromagnetically isolate the first active device from the at least one of the second active device and the passive component. The electromagnetic shielding includes one of a grounded metal layer and via stack, and a grounded metal layer disposed one of above and below the first active device.

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Waltham, MA, United States of America

Ambarish Roy