Sandisk Technologies Inc.

Arm Limited

Amandeep Kaur

Ravindra Arjun Madpur

Andy Wangkun Chen

Sridhar Yadala

Tianyu Tang

Sneha Bhatia

Jayanth Mysore Thimmaiah

Anil Pai

Jiwang Lee

Penaka Phani Goberu

Khushal Gelda

Ragul Kumar Krishnan

Venkata Kolagatla

Nidhi Batra

Various implementations described herein are related to a method for identifying multi-bank memory architecture having multiple banks including a first bank and a second bank. The method may receive a faulty row address having a faulty bank selection bit, and also, the method may select the first bank or the second bank for row redundancy operations based on the faulty bank selection bit.

Row redundancy techniques

Disclosed is an apparatus including a datapath and a test circuit. The datapath is configured to transfer data between a memory core and an IO interface. The datapath includes a plurality of circuits, and a memory core interface. The plurality of circuits operates according to a supply voltage. The test circuit is coupled to the datapath, and configured to determine, from a set of operable voltage levels of the supply voltage, a first minimum operable voltage level for the datapath to operate for the data traversing the datapath at a first frequency.

Self testing circuit for power optimization

Apparatuses, systems, methods, and computer program products are disclosed for on-die signal calibration. A calibration circuit on an integrated circuit device receives data from an active data path of the integrated circuit device and detects a variation in the received data from a calibration data pattern. An adjustment circuit on an integrated circuit device reduces a delay of an active data path of the integrated circuit device in response to detecting a first variation in received data. An adjustment circuit on an integrated circuit device increases a delay of an active data path of the integrated circuit device in response to detecting a second variation in received data.

On-die signal calibration

Apparatuses, systems, methods, and computer program products are disclosed for queueing commands for storage operations. An apparatus includes a command queue configured to queue storage commands received at a storage device and a controller for the storage device. A controller is configured to receive a storage command on a first port of a storage device. A controller is configured to queue a received storage command as an entry in a command queue. An entry in a command queue indicates a type of a received storage command. A controller is configured to service a received storage command from a command queue on a second port of a storage device based on a type of the received storage command indicated by an entry in the command queue associated with the received storage command.

Command queue for storage operations

Apparatuses, systems, methods, and computer program products are disclosed for accessing non-volatile memory. An apparatus includes one or more memory die. A memory die includes an array of non-volatile memory cells, a set of ports, and an on-die controller. The set of ports includes a first port and a second port. The first port includes a first plurality of electrical contacts and the second port includes a second plurality of electrical contacts. The on-die controller communicates via the set of ports to receive command and address information and to transfer data for a data operation on the array of non-volatile memory cells. The on-die controller uses the first port and the second port in a first mode and uses the first port without the second port in a second mode. The second mode provides compatibility with an interface of a legacy type of memory die.

Interface for non-volatile memory

Apparatuses, systems, methods, and computer program products are disclosed for accessing non-volatile memory. An apparatus includes one or more memory die. A memory die includes an array of non-volatile memory cells, a set of ports, and an on-die controller. A set of ports includes a first port and a second port. A first port includes a first plurality of electrical contacts and a second port includes a second plurality of electrical contacts. An on-die controller communicates via a set of ports to receive command and address information and to transfer data for data operations on an array of non-volatile memory cells. An on-die controller uses a first port to receive command and address information and to transfer data. An on-die controller uses a second port to transfer data but not to receive command and address information.

Disclosed is a system including a memory timing calibration circuit to calibrate a strobe signal of a memory device and a method of calibrating the strobe signal. The memory timing calibration circuit includes a difference signal generator coupled to a strobe signal generator and an external control circuit. The difference signal generator is configured to generate a difference signal indicating a time difference between the strobe signal from the strobe signal generator and an external clock signal from the external control circuit. The memory timing calibration circuit further includes a delay circuit coupled to the difference signal generator and the external control circuit. The delay circuit is configured to generate a modified external clock signal by delaying the external clock signal by a delay determined based at least in part on the difference signal.

Growing community of inventors

Bengaluru, India

Amandeep Kaur